Anzeige
Erschienen in:
01.02.2013
Dense PLZT films grown on nickel substrates by PVP-modified sol–gel method
Erschienen in: Journal of Materials Science | Ausgabe 3/2013
EinloggenAktivieren Sie unsere intelligente Suche, um passende Fachinhalte oder Patente zu finden.
Wählen Sie Textabschnitte aus um mit Künstlicher Intelligenz passenden Patente zu finden. powered by
Markieren Sie Textabschnitte, um KI-gestützt weitere passende Inhalte zu finden. powered by
Abstract
We have successfully grown ferroelectric Pb0.92La0.08Zr0.52Ti0.48O3 (PLZT) films on base metal foils by chemical solution deposition using sol–gel solutions containing polyvinylpyrrolidone. Under zero-bias field, we measured a dielectric constant of ≈820 and dielectric loss of ≈0.06 at room temperature, and a dielectric constant of ≈1250 and dielectric loss of ≈0.03 at 150 °C. In addition, leakage current density of ≈1.5 × 10−8 A/cm2, remanent polarization of ≈11.2 μC/cm2, and coercive field of ≈40.6 kV/cm were measured at room temperature on a ≈3-μm-thick PLZT film grown on LaNiO3-buffered nickel substrate. Finally, energy density ≈25 J/cm3 was measured from the P–E hysteresis loop at an applied field of 2 × 106 V/cm.