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Journal of Materials Science
Erschienen in: Journal of Materials Science 1/2016

19.08.2015 | 50th Anniversary

Review: grain boundary faceting–roughening phenomena

verfasst von: B. B. Straumal, O. A. Kogtenkova, A. S. Gornakova, V. G. Sursaeva, B. Baretzky

Erschienen in: Journal of Materials Science | Ausgabe 1/2016

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Abstract

Similar to free surfaces, the grain boundaries (GBs) in metals, semiconductors and insulators can contain flat (faceted) and curved (rough) portions. In the majority of cases, facets are parallel to the most densely packed planes of coincidence sites lattice formed by two lattices of abutting grains. Facets disappear with the increasing temperature (faceting–roughening transition) and the increasing angular distance from coincidence misorientation. The temperature of GB faceting–roughening transition T R decreases with the increasing inverse density of coincidence sites Σ. In case of fixed Σ, T R decreases with the decreasing density of coincidence sites in the GB plane. The intersection line (ridge) between facets or between facets and curved (rough) portions of surfaces can be of first order (two different tangents in the contact point) or of second order (common tangent, continuous transitions). The rough (curved) portions of GB can also form the first-order rough-to-rough ridges (with two tangents). GB facets control the transition from normal to abnormal grain growth and strongly influence the GB migration, diffusion, wetting, fracture and electrical conductivity.
Vorheriger Artikel Aluminum hydroxide multilayer assembly capable of extinguishing flame on polyurethane foam
Nächster Artikel Factors affecting the dissociation width of dissociated dislocations in FCC metals and alloys

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Metadaten
Titel
Review: grain boundary faceting–roughening phenomena
verfasst von
B. B. Straumal
O. A. Kogtenkova
A. S. Gornakova
V. G. Sursaeva
B. Baretzky
Publikationsdatum
19.08.2015
Verlag
Springer US
Erschienen in
Journal of Materials Science / Ausgabe 1/2016
Print ISSN: 0022-2461
Elektronische ISSN: 1573-4803
DOI
https://doi.org/10.1007/s10853-015-9341-1

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