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Microwave dielectric ceramics in the BaO–TiO2–ZnO system doped with Nb2O5

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Abstract

The microwave dielectric properties of BaO–TiO2–ZnO (BTZ) system ceramics were studied as a function of the amount of Nb2O5 dopant. With the addition of 0–0.025 mol% Nb2O5, the substitution of Ti4+ ions with Nb5+ ions decreased the sintering temperature and increased the dielectric constant εr and quality factor Q of the system due to the similar atomic radius of Nb5+ and Ti4+ ions. When the amount of Nb5+ increased further (>0.025 mol%), Q was decreased by increasing the titanium vacancies. When the system doped with 0.025 mol% Nb2O5 was sintered at 1160 °C for 6 h, the εr, Qf0, and the temperature coefficient of resonant frequency (τf) were 36.7, 41,000 GHz, and −5.0 ppm/°C, respectively, at 5 GHz.

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Acknowledgments

This work was supported by the Natural Science Foundation of Tianjin under grant No. 06YFJMJC01000.

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  1. School of Electronic and Information Engineering, Tianjin University, Tianjin, 300072, P.R. China

    Liying Chen, Shunhua Wu, Shuang Wang & Guoqing Wang

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  1. Liying Chen
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  2. Shunhua Wu
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  3. Shuang Wang
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  4. Guoqing Wang
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Correspondence to Liying Chen.

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Chen, L., Wu, S., Wang, S. et al. Microwave dielectric ceramics in the BaO–TiO2–ZnO system doped with Nb2O5 . J Mater Sci: Mater Electron 19, 463–465 (2008). https://doi.org/10.1007/s10854-007-9363-9

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  • DOI: https://doi.org/10.1007/s10854-007-9363-9

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