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Erschienen in:
01.01.2009
Lucky-drift model for impact ionization in amorphous semiconductors
Erschienen in: Journal of Materials Science: Materials in Electronics | Sonderheft 1/2009
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Abstract
A lucky-drift model for impact ionization has been recently successfully used to account for avalanche phenomenon in amorphous selenium (a-Se). We extend the calculations in order to compare the effect in a-Se with possible impact ionization phenomenon in another prototype amorphous semiconductor: hydrogenated amorphous silicon (a-Si:H). The results suggest that the higher phonon energy in a-Si:H as compared to a-Se shifts the threshold field for impact ionization in a-Si:H to essentially higher fields than those needed for avalanche multiplication in a-Se. Furthermore, it has been recently suggested that impact ionization is a precursor of the switching effect in the phase-change-memory materials (Ge2Sb2Te5). We apply the lucky-drift model to Ge2Sb2Te5 and show that it is capable to account for the magnitude of the electric field necessary to launch the electronic switching in this material.