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Erschienen in: Journal of Materials Science: Materials in Electronics 12/2009

01.12.2009

Effects of trace amount addition of rare earth on properties and microstructure of Sn–Ag–Cu alloys

verfasst von: Liang Zhang, Song-bai Xue, Li-li Gao, Yan Chen, Sheng-lin Yu, Zhong Sheng, Guang Zeng

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 12/2009

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Abstract

Ternary lead free solder alloys Sn–Ag–Cu were considered as the promising alternatives to conventional SnPb alloys comparing with other solders. In the present work, effects of trace amounts of rare earth Ce on the wettability, mechanical properties and microstructure of Sn–Ag–Cu solder have been investigated by means of scanning electron microscopy and energy dispersive X-ray analysis systematically. The results indicate that adding trace amount of rare earth Ce can remarkably improve the wettability, mechanical strength of Sn–Ag–Cu solder joint at different temperature, especially when the content of rare earth Ce is at about 0.03%, the tensile strength will be 110% times or more than that of the lead free solder joint without rare earth Ce addition. Moreover, it was observed that the trace amount of rare earth Ce in Sn–Ag–Cu solder may refine the joint matrix microstructure, modify the Cu6Sn5 intermetallic phase at the copper substrate/solder interface, and the intermetallic compound layer thickness was reduced significantly. In addition, since rare earth Ce possesses a higher affinity to Sn in the alloy, adding of rare earth Ce can also lead to the delayed formation and growth of the intermetallic compounds of Ag3Sn and Cu6Sn5 in the alloy.

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Metadaten
Titel
Effects of trace amount addition of rare earth on properties and microstructure of Sn–Ag–Cu alloys
verfasst von
Liang Zhang
Song-bai Xue
Li-li Gao
Yan Chen
Sheng-lin Yu
Zhong Sheng
Guang Zeng
Publikationsdatum
01.12.2009
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 12/2009
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-008-9850-7

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