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Erschienen in:
01.09.2014
Diffusion induced residual stress in comb-type microaccelerometer structure
Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 9/2014
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Abstract
This paper presents the effect of residual stresses due to deep boron diffusion on microaccelerometer structure. The microaccelerometer structure was simulated at various residual stresses using finite element method. The residual stress due to the diffusion process was estimated to be 450 MPa by using Raman spectroscopy. After fabricating the microaccelerometer structure, the deflection (~2 μm) of the moving comb fingers due to the stress was found to be in good agreement with the simulated value (2.1 μm). Sensitivity of the accelerometers was measured to be ~50 mV/g for 0–30 g range. In the initial range (0–5 g), the output of the accelerometers are depicting nonlinearity as anticipated from the simulated results.