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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 12/2015

18.08.2015

Investigation on material selection for gate dielectric in nanocrystalline silicon (nc-Si) top-gated thin film transistor (TFT) using Ashby’s, VIKOR and TOPSIS

verfasst von: Prachi Sharma, Navneet Gupta

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 12/2015

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Abstract

In this paper, various possible materials for the gate dielectric of nc-Si top-gated thin film transistor (TFT) and their material properties like dielectric constant, bandgap, conduction band offset and interface trap density are taken into consideration and Ashby’s, VlseKriterijumska Optimizacija I Kompromisno Resenje in Serbian (VIKOR) and Technique for order preference by similarity to ideal solution (TOPSIS) approaches are applied to select the most suitable gate dielectric material. The analysis results suggest that Si3N4 is the most suitable gate dielectric material for the better performance of nc-Si top-gated TFT. The results shows good agreement between Ashby’s, VIKOR and TOPSIS approaches.
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Literatur
1.
A.J. Snell, K.D. Mackenzie, W.E. Spear, P.G. LeComber, Application of amorphous silicon field effect transistors in addressable liquid crystal display panels. Appl. Phys. Lett. 24, 357–362 (1981)
2.
M. Mizukami, K. Inukai, H. Yamagata, T. Konuma, T. Nishi, J. Koyama, S. Yamazaki, 6-Bit digital VGA OLED. SID Int. Symp. Dig. Tech. Pap. 31, 912–915 (2000)CrossRef
3.
K. Finkenzeller, RFID Handbook: Fundamentals and Applications in Contactless Smart Cards and Identification, 2nd edn. (Wiley, West Sussex, England, 2003)CrossRef
4.
I.C. Cheng, S. Allen, S. Wagner, Evolution of nanocrystalline silicon thin film transistor channel layers, in Proceedings of the 20th International Conference on Amorphous and Microcrystalline Semiconductors, Campos do Jordao, Brazil, 24–29 Aug 2003, pp. 720–724
5.
C.H. Lee, A. Sazonov, A. Nathan, High-mobility nanocrystalline silicon thin-film transistors fabricated by plasma-enhanced chemical vapor deposition. Appl. Phys. Lett. 86, 222106-1–222106-3 (2005)
6.
A.T. Hatzopoulos, N. Arpatzanis, D.H. Tassis, C.A. Dimitriadis, F. Templier, M. Oudwan, G. Kamarinos, Effect of channel width on the electrical characteristics of amorphous/nanocrystalline silicon bilayer thin-film transistors. IEEE Trans. Electron Dev. 54, 1265–1269 (2007)CrossRef
7.
K.W. Shin, Fabrication and Analysis of Bottom Gate Nanocrystalline Silicon Thin Film Transistors. Ph.D. Thesis, University of Waterloo, Canada, 2008
8.
Y. Kuo, in Thin Film Transistors: Materials and Process, vol. 2, 1st edn. (Kluwer Academic, New York, 2004), pp. 120–126
9.
M.D. Groner, S.M. George. High-k dielectrics grown by atomic layer deposition: capacitor and gate applications, ed. by Murarka, Eizenberg and Sinha. Interlayer dielectrics for semiconductor technologies, pp. 327–348
10.
R. Joyce, K. Singh, S. Varghese, J. Akhtar, Stress reduction in silicon/oxidized silicon–Pyrex glass anodic bonding for MEMS device packaging: RF switches and pressure sensors. J. Mater. Sci. Mater. Electron. 26(1), 411–423 (2015)CrossRef
11.
A. Subramaniam, K.D. Cantley, R.A. Chapman, H.J. Stiegler, E.M. Voge, Submicron ambipolar nanocrystalline-silicon TFTs with high-k gate dielectrics, in ISDRS, College Park, MD, USA, 7–9 December 2011
12.
C.H. Lee, A. Nathan, Stability of nc-Si: H TFTs with silicon nitride gate dielectric. IEEE Trans. Electron Dev. 54, 45–50 (2007)CrossRef
13.
C.H. Cheng, P.S. Wang, C.I. Wu, G.R. Lin, Nano-crystalline silicon-based bottom gate thin-film transistor grown by LTPECVD with hydrogen-free He diluted SiH4. J. Displ. Technol. 9, 536–544 (2013)CrossRef
14.
L. Anojkumar, M. Ilangkumaran, V. Sasirekha, Comparative analysis of MCDM methods for pipe material selection in sugar industry. Expert Syst. Appl. 41, 2964–2980 (2014)CrossRef
15.
M.F. Ashby’s, Multi objective optimization in material design and selection. Acta Mater. 48, 1792–1795 (2000)
16.
M.F. Ashby’s, Material Selection in Mechanical Design, 2nd edn. (Butterworth-Heinemann, Oxford, UK, 1999)
17.
S. Opricovic, Multi-criteria Optimization of Civil Engineering Systems (Faculty of Civil Engineering, Belgrade, 1998)
18.
C. Hwang, K. Yoon, Multiple Attribute Decision Making Methods and Application Survey. Business and Economics, vol. 186 (Springer, Berlin, 2005)
19.
J. Kumar, N. Gupta, Investigation on microwave dielectric materials for dielectric resonator antennas. Int. J. Appl. Electromagn. Mech. 47(1), 263–272 (2015)
20.
S. Opricovic, G.H. Tzeng, Compromise solution by MCMD methods: a comparative analysis of VIKOR and TOPSIS. Eur. J. Oper. Res. 156, 445–455 (2004)CrossRef
21.
M.R. Esmaeili-Rad, F. Li, A. Sazonov, A. Nathan, Stability of nanocrystalline silicon bottom-gate thin film transistors with silicon nitride gate dielectric. J. Appl. Phys. 102, 064512–1–064512-7 (2007)CrossRef
22.
R.E. Herbert, Y. Hwang, S. Stemmer, Comparison of methods to quantify interface trap densities at dielectric/III–V semiconductor interfaces. J. Appl. Phys. 108, 124101.1–124101.15 (2010)
23.
B.N. Aditya, N. Gupta, Material selection methodology for gate dielectric material in metal–oxide–semiconductor devices. Mater. Des. 35, 696–700 (2012)CrossRef
24.
G. Vincent, A. Chantre, D. Bois, Electric field effect on the thermal emission of traps in semiconductor junctions. J. Appl. Phys. 50, 5484–5487 (1979)CrossRef
25.
S.K. Madan, D.A. Antoniadis, Leakage current mechanisms in hydrogen passivated fine-grain polycrystalline silicon on insulator MOSFET’s. IEEE Trans. Electron Dev. ED-33, 1518–1528 (1986)
26.
J.A. Duffy, Bonding Energy Levels and Bands in Inorganic Materials (Wiley, New York, 1990)
27.
E.H. Nicollian, J.R. Brews, MOS Physics and Technology (Wiley, New York, 1982)
Metadaten
Titel
Investigation on material selection for gate dielectric in nanocrystalline silicon (nc-Si) top-gated thin film transistor (TFT) using Ashby’s, VIKOR and TOPSIS
verfasst von
Prachi Sharma
Navneet Gupta
Publikationsdatum
18.08.2015
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 12/2015
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-015-3624-9

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