Abstract
Transparent conductive oxide (TCO) p-type Li-doped NiO thin films were deposited on the (0001) sapphire substrates by magnetron sputtering technique with a high purity NiO:Li2O ceramic target. We systematically investigated the structural, electrical and optical properties of NiO:Li thin films annealed in different conditions. We found that annealing in different conditions greatly affects the physical properties of NiO:Li thin films. Compared with the NiO:Li thin film annealed in oxygen, the hole concentration of NiO:Li thin film annealed in nitrogen at the same processing temperature is obviously lower. Annealed in oxygen at 500 °C, NiO:Li films show excellent crystal quality with single (111) orientation, high hole concentrations. When the annealing temperature increased, the transmittance of NiO:Li thin films become better for wavelength range from ultraviolet (UV) to visible with a significant absorption edge near 350 nm.
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This work was supported by the Natural Basic Research Program of China (973 Program, No. 2011CB302005) and Natural Science Foundation of China (61376046, 61223005).
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Chu, X., Leng, J., Liu, J. et al. Effect of annealing conditions on the structural, electrical and optical properties of Li-doped NiO thin films. J Mater Sci: Mater Electron 27, 6408–6412 (2016). https://doi.org/10.1007/s10854-016-4578-2
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DOI: https://doi.org/10.1007/s10854-016-4578-2