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Effect of O5+ ion implantation on the electrical and structural properties of Cu nanowires

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Abstract

Ion beam creates changes in the material along their track, not only embody the excellent properties but also tailor new materials. When the ions are implanted into the nanomaterials, they collide with the target atoms and interact through three different phenomena; electron collision, nuclear collision and charge exchange. In the present study, 1 MeV O5+ ions were implanted in copper nanowires of diameter 80 nm synthesized using template synthesis approach. Electrical and structural properties were recorded using Keithley 2400 series source meter and Rigaku X-ray diffractometer respectively, before and after the implantation. I–V characteristics showed the ohmic behavior with enhancement in conductivity of copper nanowires after implantation. No structural damage in the nanowires was revealed by XRD spectra. The work done can be viewed as a positive aspect of implantation in metallic nanowires especially in 80 nm diameter Cu nanowires and may be utilized to fabricate nanodevices.

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Acknowledgments

The authors wish to acknowledge the Director, IUAC, New Delhi, for providing Low Energy Ion Beam Facility. The help provided by LEIBF group during the experiment is also thankfully acknowledged. Authors also acknowledge NIT Kurukshetra for SEM and XRD facilities and SAI Lab, Thapar University, Patiala for providing EDS facility.

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Authors and Affiliations

  1. Department of Physics, National Institute of Technology, Kurukshetra, 136119, Haryana, India

    R. P. Chauhan & Pallavi Rana

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  1. R. P. Chauhan
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  2. Pallavi Rana
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Correspondence to R. P. Chauhan.

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Chauhan, R.P., Rana, P. Effect of O5+ ion implantation on the electrical and structural properties of Cu nanowires. J Radioanal Nucl Chem 302, 851–856 (2014). https://doi.org/10.1007/s10967-014-3262-3

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  • DOI: https://doi.org/10.1007/s10967-014-3262-3

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