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The (100) orientation evolution and temperature-dependent electrical properties of Bi(Zn1/2Ti1/2)O3–PbTiO3 ferroelectric films

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Abstract

The 0.2Bi(Zn1/2Ti1/2)O3–0.8PbTiO3 (0.2BZT–0.8PT) ferroelectric thin film was successfully fabricated on Pt(111)/Ti/SiO2/Si substrates by a sol–gel method. The result indicates that the film exhibits the (100) preferred orientation and has a relatively dense and uniform microstructure with a thickness of ~230 nm. The formation mechanism of the oriented films was ascribed to the growth of the (100) oriented PbO layer at ~450 °C during a layer-by-layer crystallization process. Temperature-dependent electrical properties of the 0.2BZT–0.8PT films were investigated, showing that the film has a potential for high temperature applications.

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Acknowledgments

This work was financially supported by a project of Natural Science Foundation of Anhui province (1108085J14) and the National Natural Science Foundation of China (50972035 and 51272060).

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Authors and Affiliations

  1. Institute of Electro Ceramics and Devices, School of Materials Science and Engineering, Hefei University of Technology, Hefei, 230009, People’s Republic of China

    Longdong Liu, Ruzhong Zuo & Qian Sun

  2. School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, 230009, People’s Republic of China

    Qi Liang

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  1. Longdong Liu
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  2. Ruzhong Zuo
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  3. Qian Sun
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  4. Qi Liang
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Correspondence to Ruzhong Zuo.

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Liu, L., Zuo, R., Sun, Q. et al. The (100) orientation evolution and temperature-dependent electrical properties of Bi(Zn1/2Ti1/2)O3–PbTiO3 ferroelectric films. J Sol-Gel Sci Technol 65, 384–387 (2013). https://doi.org/10.1007/s10971-012-2949-6

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  • DOI: https://doi.org/10.1007/s10971-012-2949-6

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