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An investigation of Zn/ZnO:Al/p-Si/Al heterojunction diode by sol–gel spin coating technique

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Abstract

Present study shows the structural, morphological, optical characterization of sol–gel spin coated ZnO:Al film and investigation of device efficiency of Zn/ZnO:Al/p-Si/Al heterojunction diode structure. X-ray diffraction study indicates that film has hexagonal polycrystalline structure with (002) preferential direction. Atomic force microscope and scanning electron microscope images exhibit that surface of ZnO:Al/p-Si consists of homogenously scattered nanoparticles. The surface roughness of ZnO:Al film is found to be 15.24 nm. The band gap value of ZnO:Al film deposited on glass substrate is calculated to be 3.34 eV. The electrical characterization of Zn/ZnO:Al/p-Si/Al heterojunction structure is made by current–voltage (I–V) and capacitance–voltage (C–V) measurements. From these measurements, the heterojunction structure shows a rectifying behavior under a dark condition. The ideality factor and barrier height of Zn/n-ZnO:Al/p-Si/Al structure are calculated as 3.23 and 0.68 eV. The heterojunction structure have diode characteristic with rectification ratio at 64.4 at +2.0 V in the dark. The results suggest that Zn/ZnO:Al/p-Si/Al heterojunction diode can be successfully used in many optoelectronic applications.

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Authors and Affiliations

  1. Department of Physics Education, Kazim Karabekir Education Faculty, Atatürk University, Erzurum, 25240, Turkey

    G. Turgut & E. Sönmez

  2. Department of Physics, Faculty of Science, Atatürk University, Erzurum, 25240, Turkey

    S. Duman, F. S. Özçelik & B. Gürbulak

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  1. G. Turgut
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  2. S. Duman
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  3. F. S. Özçelik
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  4. E. Sönmez
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  5. B. Gürbulak
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Correspondence to S. Duman.

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Turgut, G., Duman, S., Özçelik, F.S. et al. An investigation of Zn/ZnO:Al/p-Si/Al heterojunction diode by sol–gel spin coating technique. J Sol-Gel Sci Technol 71, 589–596 (2014). https://doi.org/10.1007/s10971-014-3410-9

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