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Optical and Quantum Electronics
Erschienen in: Optical and Quantum Electronics 5/2015

01.05.2015

Influence of temperature on the performance of high power AlGaInP based red light emitting diode

verfasst von: Pradip Dalapati, Nabin Baran Manik, Asok Nath Basu

Erschienen in: Optical and Quantum Electronics | Ausgabe 5/2015

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Abstract

The high power light emitting diode (LED) based on AlGaInP is tested on line at temperatures from 350 to 77 K. The experimental data are fitted to measure the relationship between temperature and the ideality factor, the forward voltage, the relative light intensity emitted by the LED, the carrier lifetime and the reverse recovery time of the device. These results show that temperature has a significant influence on different properties of such LED. Finally, it is important to note that an optimization among the different parameter values, while some increasing and others decreasing with temperature change, as indicated in the present study, is essential and must be considered for design involving the device, particularly, for any low temperature application.
Vorheriger Artikel Comparison of passively Q-switched laser performance of two composite Nd:YVO/Nd:YVO/Nd:YVO crystals with Cr:YAG saturable absorber
Nächster Artikel Photo-induced excitonic spin dynamics in GaAs

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Metadaten
Titel
Influence of temperature on the performance of high power AlGaInP based red light emitting diode
verfasst von
Pradip Dalapati
Nabin Baran Manik
Asok Nath Basu
Publikationsdatum
01.05.2015
Verlag
Springer US
Erschienen in
Optical and Quantum Electronics / Ausgabe 5/2015
Print ISSN: 0306-8919
Elektronische ISSN: 1572-817X
DOI
https://doi.org/10.1007/s11082-014-9980-5

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