Abstract
Spectral response characteristics of novel planar GaAs blocked-impurity-band (BIB) detector with the absorption region formed by ion implantation have been investigated. Processing technology and simulation method are described in detail. For obtaining a deep and flat implantation region, four-time-implantation scheme with different implantation energy and dose is proposed. Our results show that the novel planar GaAs BIB detector can response radiations with wavelength range from 165 to 400 μm, corresponding to frequency range from 750 GHz to 1.8 THz, which is perfectly suitable for the security application. An empirical formula is proposed to predict the dependence of spectral width on the depth of absorption region. It is demonstrated that a trade-off between responsivity and dark current has to be made for the optimal depth of absorption region.
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This work was supported by the National Natural Science Foundation of China (Grant No. 61404120).
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This article is part of the Topical Collection on Numerical Simulation of Optoelectronic Devices 2016.
Guest edited by Yuh-Renn Wu, Weida Hu, Slawomir Sujecki, Silvano Donati, Matthias Auf der Maur and Mohamed Swillam.
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Wang, X., Wang, B., Chen, Y. et al. Spectral response characteristics of novel ion-implanted planar GaAs blocked-impurity-band detectors in the terahertz domain. Opt Quant Electron 48, 518 (2016). https://doi.org/10.1007/s11082-016-0778-5
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DOI: https://doi.org/10.1007/s11082-016-0778-5