Abstract
An investigation is performed into the optical and electrical application of Mg doping GZO thin films deposited on glass substrates using a radio frequency magnetron sputtering (RF-sputtering) system with working pressures ranging from 3 to 9 mtorr. The X-ray diffraction patterns show that the MGZO films all exhibit a strong (103) preferential orientation. Moreover, the films show an average optical transmittance of approximately 85% in the visible light range. The electrical resistivity increases with an increasing working pressure. Thus, the optimal resistivity (1.9 × 10−3 Ω-cm) is obtained at the lowest working pressure of 3 mtorr and is the result of an improved crystalline structure. The results show the Mg doping GZO can be applied in the optical elements.
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The authors gratefully acknowledge the financial support provided to this study by the Ministry of Science and Technology, R.O.C., under Contract No. MOST 105-2221-E-151-026.
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This article is part of the Topical Collection on Photonic Science and Engineering on the Micro/Nano Scale.
Guest edited by Yen-Hsun Su, Lei Liu, Yiting Yu and Yikun Liu.
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Chen, TH., Yang, CL. The Mg doping GZO thin films for optical and electrical application by using RF magnetron sputtering. Opt Quant Electron 48, 533 (2016). https://doi.org/10.1007/s11082-016-0808-3
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DOI: https://doi.org/10.1007/s11082-016-0808-3