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Optical and Quantum Electronics
Erschienen in: Optical and Quantum Electronics 8/2017

01.08.2017

Influence of temperature on different optoelectronic characteristics of InGaN light emitting diodes

verfasst von: Pradip Dalapati, Nabin Baran Manik, Asok Nath Basu

Erschienen in: Optical and Quantum Electronics | Ausgabe 8/2017

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Abstract

We have measured the electroluminescence (EL) and carrier lifetime characteristics in InGaN/Sapphire purple light emitting diode (LED), namely, UV3TZ-405-30 in a temperature range from 350 to 120 K and have compared them with those of a similar LED (UV3TZ-395-15) but with different Indium concentration, measured earlier. While it is found that for the present device the EL intensity decreases drastically with lowering of temperature after reaching a maximum (99%) at 228 K, this is markedly different from the previous device where intensity continues to increase monotonically till lowest temperature. This qualitatively distinct temperature dependence indicates difference in nature of localisation of carriers in the multiple quantum wells for varying Indium content in the two devices. The light–current–temperature data have been analysed in terms of the semiconductor rate equations to determine different optoelectronic properties. Next, estimating the ideality factor from the current–voltage (I–V) measurements, the effective carrier lifetime has been evaluated from the open circuit voltage decay process. Using the above measurements, the temperature dependence of the internal quantum efficiency of the device has been calculated and it is found to attain a maximum value of 99.88% at 228 K. Unlike all previous calculations, a unique feature of the present approach has been to include the effect of temperature dependence of the radiative recombination coefficient (B) in the rate equation analysis. Finally, a comparative study of the temperature dependence of the different optoelectronic properties of both devices is presented with and without this effect.
Vorheriger Artikel Capability of topological charge-based orthogonal zone plate in generating sharp focal spot and ring-like beam
Nächster Artikel A simple technique for constructing exact solutions to nonlinear differential equations with conformable fractional derivative

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Metadaten
Titel
Influence of temperature on different optoelectronic characteristics of InGaN light emitting diodes
verfasst von
Pradip Dalapati
Nabin Baran Manik
Asok Nath Basu
Publikationsdatum
01.08.2017
Verlag
Springer US
Erschienen in
Optical and Quantum Electronics / Ausgabe 8/2017
Print ISSN: 0306-8919
Elektronische ISSN: 1572-817X
DOI
https://doi.org/10.1007/s11082-017-1104-6

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