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Active Oxidation of SiC

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Abstract

Silicon carbide (SiC) forms a protective condensed-phase oxide (SiO2) in passive oxidation and a volatile sub-oxide (SiO(g)) in active oxidation. The transition between these two modes of oxidation and the rates of active oxidation are critical issues. A literature review indicates that impurity effects, the difference between active-to-passive and passive-to-active transitions, and the effect of total pressure on these transitions remain unexplored for SiC. Measurements were made in a thermogravimetric apparatus (TGA) by changing oxygen potentials either by blending O2/Ar mixtures or changing total pressures in a pure oxygen gas stream to the point where a transition occurs. Specimens were examined with standard optical and electron-optical techniques. Active-to-passive and passive-to-active transitions were measured and found to be similar for SiC, which is in contrast to pure Si. The similarity in SiC is attributed to SiC/SiO2 interfacial reactions producing the necessary conditions for passive scale formation (active-to-passive) or passive scale breakdown (passive-to-active). Comparable results were obtained in both the O2/Ar and reduced total O2 pressure cases for SiC.

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Acknowledgements

Thanks are due to Terry McCue, ASRC Aerospace/NASA Glenn for electron microscopy. Helpful comments by Drs. T. Narushima, Tohoku University, Japan and E. Opila, University of Virginia are appreciated.

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Authors and Affiliations

  1. NASA Glenn Research Center, Cleveland, OH, 44135, USA

    N. S. Jacobson

  2. East Central University, Ada, OK, 74820, USA

    D. L. Myers

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  1. N. S. Jacobson
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  2. D. L. Myers
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Correspondence to N. S. Jacobson.

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Jacobson, N.S., Myers, D.L. Active Oxidation of SiC. Oxid Met 75, 1–25 (2011). https://doi.org/10.1007/s11085-010-9216-4

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