Abstract
Making full-color active matrix display based on quantum dot light emitting diodes (AM-QLEDs) via ink-jet printing is attractive in display industry due to QLEDs’ wide color gamut and their potential manufacturing advantages of large screen size and low cost. The challenges for realizing AM-QLED display are how to achieve high quality films through ink-jet printing, multi-color patterning, electroluminescence (EL) color purity, and high efficiency. Herein, a 2-inch diagonal full-color AM-QLEDs display with pixel density of 120 pixels per inch (PPI) fabricated by ink-jet printing technique is presented. Driven by a metal oxide TFT (MOTFT) back-panel, the display exhibits a maximum brightness of 400 cd m−2, and a color gamut of 109% (NTSC 1931). The red, green, and blue (RGB) monochrome QLEDs passive matrix panels fabricated by ink-jet printing technique have a current efficiency (CE) of 2.5, 13.9, and 0.30 cd A−1, respectively. To the best of our knowledge, the efficiencies are the highest among passive matrix QLEDs panels made by ink-jet printing technique. The ink-jet printed QDs films show good thickness uniformity due to high viscosity and low volatility of the printable inks, and no cross-contamination between adjacent pixels resulting from the hydrophobic pixel defining layer.
Similar content being viewed by others
References
Anikeeva PO, Halpert JE, Bawendi MG, Bulovic V. Nano Lett, 2009, 9: 2532–2536
Sun Q, Wang YA, Li LS, Wang D, Zhu T, Xu J, Yang C, Li Y. Nat Photon, 2007, 1: 717–722
Wood V, Bulovic V. Nano Rev, 2010, 1: 5202
Shirasaki Y, Supran GJ, Bawendi MG, Bulovic V. Nat Photon, 2013, 7: 13–23
Colvin VL, Schlamp MC, Alivisatos AP. Nature, 1994, 370: 354–357
Dai X, Zhang Z, Jin Y, Niu Y, Cao H, Liang X, Chen L, Wang J, Peng X. Nature, 2014, 515: 96–99
Yang YX, Zheng Y, Cao WR, Titov A, Hyvonen J, Manders JR, Xue JG, Holloway PH, Qian L. Nat Photon, 2105, 9: 1–9
Kim TH, Cho KS, Lee EK, Lee SJ, Chae J, Kim JW, Kim DH, Kwon JY, Amaratunga G, Lee SY, Choi BL, Kuk Y, Kim JM, Kim K. Nat Photon, 2011, 5: 176–182
Choi MK, Yang J, Kang K, Kim DC, Choi C, Park C, Kim SJ, Chae SI, Kim TH, Kim JH, Hyeon T, Kim DH. Nat Commun, 2015, 6: 7149
Kim BH, Onses MS, Lim JB, Nam S, Oh N, Kim H, Yu KJ, Lee JW, Kim JH, Kang SK, Lee CH, Lee J, Shin JH, Kim NH, Leal C, Shim M, Rogers JA. Nano Lett, 2015, 15: 969–973
Zhu T, Shanmugasundaram K, Price SC, Ruzyllo J, Zhang F, Xu J, Mohney SE, Zhang Q, Wang AY. Appl Phys Lett, 2008, 92: 023111
Haverinen HM, Myllylä RA, Jabbour GE. Appl Phys Lett, 2009, 94: 073108
Haverinen HM, Myllyla RA, Jabbour GE. J Display Technol, 2010, 6: 87–89
Jiang C, Zhong Z, Liu B, He Z, Zou J, Wang L, Wang J, Peng JB, Cao Y. ACS Appl Mater Interfaces, 2016, 8: 26162–26168
Sabeeh A, Thakur Y, Chao JH, Kshirsagar A, Ruzyllo J. ECS Trans, 2015, 64: 1–5
Singh M, Haverinen HM, Dhagat P, Jabbour GE. Adv Mater, 2010, 22: 673–685
Zheng H, Zheng YN, Liu NL, Ai N, Wang Q, Wu S, Zhou JH, Hu DG, Yu SF, Han SH, Xu W, Luo C, Meng YH, Jiang ZX, Chen YW, Li DY, Huang F, Wang J, Peng JB, Cao Y. Nat Commun, 2013, 4: 1971
de Gans BJ, Duineveld PC, Schubert US. Adv Mater, 2004, 16: 203–213
Yu X, Marks TJ, Facchetti A. Nat Mater, 2016, 15: 383–396
Kim MG, Kanatzidis MG, Facchetti A, Marks TJ. Nat Mater, 2011, 10: 382–388
Wu CC, Chen CW, Lin CL, Yang CJ. J Display Technol, 2005, 1: 248–266
Dong YJ, Caruge JM, Zhou ZQ, Hamilton C, Popovic Z, Ho J, Bulovic V, Bawendi M, Kazlas P, Steckel J, Seth CS. J Soc Inf Disp, 2015, 46: 270–273
Mashford BS, Stevenson M, Popovic Z, Hamilton C, Zhou Z, Breen C, Steckel J, Bulovic V, Bawendi M, Coe-Sullivan S, Kazlas PT. Nat Photon, 2013, 7: 407–412
Castan A, Kim HM, Jang J. ACS Appl Mater Interfaces, 2014, 6: 2508–2515
Zhang H, Li H, Sun X, Chen S. ACS Appl Mater Interfaces, 2016, 8: 5493–5498
Höfle S, Schienle A, Bruns M, Lemmer U, Colsmann A. Adv Mater, 2014, 26: 2750–2754
Kim HH, Park S, Yi Y, Son DI, Park C, Hwang DK, Choi WK. Sci Rep, 2015, 5: 8968
Shimoda T, Morii K, Seki S, Kiguchi H. MRS Bull, 2003, 28: 821–827
Peng H, Jiang Y, Chen S. Nanoscale, 2016, 8: 17765–17773
Coe-Sullivan S, Steckel JS, Woo WK, Bawendi M, Bulovic V. Adv Funct Mater, 2015, 15: 1117–1124
Niu QL, Shao YX, Xu W, Wang L, Han SH, Liu NL, Peng JB, Cao Y, Wang J. Org Electron Physics, Mater Appl, 2008, 9: 95–100
Zhong Z, Zhao S, Pei J, Wang J, Ying L, Peng J, Cao Y. ACS Appl Mater Interfaces, 2016, 8: 20237–20242
Kim HP, Yusoff ARBM, Lee HJ, Lee SJ, Kim HM, Seo GJ, Youn JH, Jang J. Nanoscale Res Lett, 2014, 9: 323
Fu Y, Kim D, Moon H, Yang H, Chae H. J Mater Chem C, 2017, 5: 522–526
Kim D, Fu Y, Kim S, Lee W, Lee KH, Chung HK, Lee HJ, Yang H, Chae H. ACS Nano, 2017, 11: 1982–1990
Haskal EI, Büchel M, Duineveld PC, Sempel A, Weijer P. MRS Bull, 2002, 27: 864–869
Chen PY, Chen CC, Hsieh CC, Lin JM, Lin YS, Lin Y. J Soc Inf Disp, 2015, 46: 1352–1354
Deegan RD, Bakajin O, Dupont TF, Huber G, Nagel SR, Witten TA. Nature, 1997, 389: 827–829
Hu H, Larson RG. J Phys Chem B, 2006, 110: 7090–7094
Li Y, Lan L, Xiao P, Sun S, Lin Z, Song W, Song E, Gao P, Wu W, Peng J. ACS Appl Mater Interfaces, 2016, 8: 19643–19648
Shen X, Ho CM, Wong TS. J Phys Chem B, 2010, 114: 5269–5274
Liu H, Xu W, Tan W, Zhu X, Wang J, Peng J, Cao Y. J Colloid Interface Sci, 2016, 465: 106–111
Soltman D, Subramanian V. Langmuir, 2008, 24: 2224–2231
Acknowledgments
This work was supported by the National Key Basic Research and Development Program of China (2015CB655004), the National Natural Science Foundation of China (U1601651, 51521002, U1301243, 61574061), and the Educational Commission of Guangdong Province (2015B090914003, 2014KZDXM012)
Author information
Authors and Affiliations
Corresponding author
Electronic supplementary material
Rights and permissions
About this article
Cite this article
Jiang, C., Mu, L., Zou, J. et al. Full-color quantum dots active matrix display fabricated by ink-jet printing. Sci. China Chem. 60, 1349–1355 (2017). https://doi.org/10.1007/s11426-017-9087-y
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11426-017-9087-y