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Growth and characterization of indium doped zinc oxide films sputtered from powder targets

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Abstract

Indium doped ZnO films were grown on quartz glass substrates by radio frequency magnetron sputtering from powder targets. Indium content in the targets varied from 1at% to 9at%. In doping on the structure, optical and electrical properties of ZnO thin films were studied. X-ray diffraction shows that all the films are hexagonal wurtzite with c-axis perpendicular to the substrates. There is a positive strain in the films and it increases with indium content. All the films show a high transmittance of 86% in the visible light region. Undoped ZnO thin film exhibits a high transmittance in the near infrared region. The transmittance of indium doped ZnO thin films decreases sharply in the near infrared region, and a cut-off wavelength can be found. The lowest resistivity of 4.3×10-4 Ω·cm and the highest carrier concentration of 1.86×1021 cm-3 can be obtained from ZnO thin films with an indium content of 5at% in the target.

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Authors and Affiliations

  1. Science and Technology on Plasma Physics Laboratory, Research Center of Laser Fusion, CAEP, Mianyang, 621900, China

    Liping Peng  (彭丽萍), Yan Zhao & Weidong Wu

  2. Department of Applied Physics, Chongqing University, Chongqing, 400030, China

    Liping Peng  (彭丽萍), Liang Fang & Haibo Ruan

  3. Department of Applied physics, Chongqing Normal University, Chongqing, 400047, China

    Haibo Ruan & Chunyang Kong

Authors
  1. Liping Peng  (彭丽萍)
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  2. Liang Fang
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  3. Yan Zhao
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  4. Weidong Wu
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  5. Haibo Ruan
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  6. Chunyang Kong
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Corresponding author

Correspondence to Liping Peng  (彭丽萍).

Additional information

Funded by the Fundamental Research Fund for the Central Universities (No. CDJXS10102207), the National Natural Science Foundation of China ( Nos. 11075314, 11404302 and 50942021), the Natural Science Foundation of Chongqing City(2011BA4031), the Third Stage of “211” Innovative Talent Training Project (No. S-09109) and the Sharing Fund of Large-scale Equipment of Chongqing University (Nos. 2010063072 and 2010121556)

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Peng, L., Fang, L., Zhao, Y. et al. Growth and characterization of indium doped zinc oxide films sputtered from powder targets. J. Wuhan Univ. Technol.-Mat. Sci. Edit. 32, 866–870 (2017). https://doi.org/10.1007/s11595-017-1681-z

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  • DOI: https://doi.org/10.1007/s11595-017-1681-z

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