Skip to main content
SpringerLink
Log in

Schottky barrier heights on IV-IV compound semiconductors

  • Published:
Journal of Electronic Materials Aims and scope Submit manuscript

Abstract

The variations of Schottky barrier heights on Si1-x-y GexCy films with composition and strain have been investigated and compared to those expected for the band gap energy. The barrier on n-type does not depend on composition and strain. This independence suggests that the Fermi level at the interface between tungsten and Si1-x-yGexCy alloys (x≠0) is pinned relative to the conduction-band. For Si1-xGex the barrier on p-type follows the same trends as the band gap. For the ternary alloys, the variations of the barrier on p-type seem to be too large to be only due to a variation of the band-gap. In addition, we have investigated the influence of the deposition conditions of the sputtered-W-gate on the barrier to silicon and Si1-xGex. Our results show that the barrier on n-type-Si and p-type-Si1-xGex-films increases when the stress retained in the W-films changes from compressive to tensile as the deposition pressure increases. The absence of change in the barrier height of W to p-type-silicon and n-type-Sij xGex-films suggests that the Fermi level at the interface with Si is pinned relative to the valence-band while it is pinned relative to the conduction when Ge is added.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. K.L. Wang and R.P.G. Karunasiri, J. Vac. sci. Technol. B 11, 1159 (1993).

    Article  CAS  Google Scholar 

  2. D.L. Harame, J.H. Comfort, J.D. Cressler, E.F. Crabbé, J.Y.C. Sun, B.S. Meyerson and T. Tice, IEEE ED 42, 455 (1995).

    Google Scholar 

  3. K. Eberl, S.S. Iyer, S. Zollner, J.C. Tsang and F.K. Legoues, Appl. Phys. Lett. 60, 3033 (1992).

    Article  CAS  Google Scholar 

  4. H.J. Osten, E. Bugrel and P. Zaumseil, Appl.Phys.Lett. 64, 3440 (1994).

    Article  CAS  Google Scholar 

  5. Z. Atzmon, A.E. Bair, E.J. Jaquez, J.W. Mayer, D. Chanrasehkar, D. J. Smith, R.L. Hervig and Me D. Robinson, Appl. Phys. Lett. 65, 2559 (1994).

    Article  Google Scholar 

  6. J.L. Regolini, S. Bodnar, J.C. Oberlin, F. Ferrieu, M. Gauneau, B. Lambert and P. Boucaud, J. Vac. sci. Technol. A 12, 1015 (1994).

    Article  CAS  Google Scholar 

  7. M. Mamor, C. Guedj, P. Boucaud, F. Meyer, D. Bouchier, S. Bodnar and J. Regolini, Strained Layer Epitaxy-Materials, Processing and Device Applications, eds. E. Fitzgerald, K.Y.N. Cheng, J. Hoyt, J. Bean, 379 (Pittsburgh, PA: Mater. Res. Soc., 1995), p. 199.

    Google Scholar 

  8. R.A. Soref, J. Appl. Phys. 70, 2470 (1991).

    Article  CAS  Google Scholar 

  9. J. Xie, K. Zhang and X. Xie, J. Appl. Phys. 77, 3668 (1995).

    Article  Google Scholar 

  10. A.A. Demkov and O.F. Sankey, Phys. Rev. B 48, 2207 (1993).

    Article  CAS  Google Scholar 

  11. W. Kissinger, M. Weidner, H.J. Osten, M. Eichler, Appl. Phys. Lett. 65 3356 (1994); H.J. Osten, W. Kissinger, M. Weidner, M. Eichler, Strained Layer Epitaxy—Materials, Processing and Device Applications, ed. E. Fitzgerald, K.Y.N. Cheng, J. Hoyt, J. Bean, 379 (Pittsburgh, PA: Mater. Res. Soc.,1995), p.

    Article  CAS  Google Scholar 

  12. P. Boucaud, C. Francis, F.H. Julien, J.M. Ourtioz, D. Bouchier, S. Bodnar and J. Regolini, Appl. Phys. Lett. 64, 875 (1994).

    Article  CAS  Google Scholar 

  13. K. Rim, S. Takagi, J.J. Weiser, J.L. Hoyt and J.F. Gibbons, Strained Layer Epitaxy—Materials, Processing and Device Applications, eds. E. Fitzgerald, K.Y.N. Cheng, J. Hoyt, J. Bean, 379 (Pittsburgh, PA: Mater. Res. Soc., 1995), p. 327.

    Google Scholar 

  14. S.M. Sze, Physics of Semiconductor Devices, (New York: Wiley, 1981), ch. 8.

    Google Scholar 

  15. H. Kanaya, F. Hasegawa, E. Yamaka, T. Moriyan and M. Nakajima, Jpn. J. Appl. Phys. 28, L544 (1989).

    Article  CAS  Google Scholar 

  16. J.R. Jimenez, X. Xiao, J.C. Sturm, P.W. Pelligrini and M.M. Weeks, J. Appl. Phys. 75, 5160 (1994).

    Article  CAS  Google Scholar 

  17. A. Buxbaum, M. Eizenberg, A. Raizman and F. Schäffler, Jpn. J. Appl. Phys. 30, 3590 (1991).

    Article  CAS  Google Scholar 

  18. H.K. Liou, X. Wu, U. Gennser, V.P. Kesan, S.S. Iyer, K.N. Tu and E.S. Yang, Appl. Phys. Lett. 60, 577 (1992).

    Article  CAS  Google Scholar 

  19. R.L. Jiang, J. Li, X.C. Zhou, J.N. Liu, Y.D. Zheng, Strained Layer Epitaxy—Materials, Processing and Device Applications, eds. E. Fitzgerald, K.Y.N. Cheng, J. Hoyt, J. Bean, 379 (Pittsburgh, PA: Mater. Res. Soc., 1995), p. 223.

    Google Scholar 

  20. L. He, E. Li, Z.Q. Zhi, R.L. Jiang, J.L. Liu, Y. Shi, Y.D. Zheng, Strained Layer Epitaxy—Materials, Processing and Device Applications, eds. E. Fitzgerald, K.Y.N. Cheng, J. Hoyt, J. Bean, 379 (Pittsburgh, PA: Mater. Res. Soc., 1995), p. 121.

    Google Scholar 

  21. S. Bodnar and J.L. Regolini, J.Vac. sci. Technol. A 13, 2336 (1995).

    Article  CAS  Google Scholar 

  22. V. Aubry, F. Meyer, P. Warren and D. Dutartre, Appl. Phys. Lett. 63, 2520 (1993).

    Article  CAS  Google Scholar 

  23. M. Mamor, F. Meyer, D. Bouchier, G. Vialaret, E. Finkman, S. Bodnar and J.L. Regolini, Appl. Surf. sci., to be published.

  24. V. Aubry and F. Meyer, J. Appl. Phys. 76, 7973 (1994).

    Article  CAS  Google Scholar 

  25. O. Aboelfotoh, Solid State Electron. 34, 51 (1991).

    Article  CAS  Google Scholar 

  26. R. Braustein, A.R. Moore and F. Herman, Phys.Rev. 109, 695 (1958).

    Article  Google Scholar 

  27. D. Dutartre, G. Brémond, A. Souiffi and T. Benyattou, Phys. Rev. Lett. B3, 44 (1991).

    Google Scholar 

  28. J.A. Thorton and D.W. Hoffman, Thin Solid Films 171, 5 (1989).

    Article  Google Scholar 

  29. M. Mamor, E. Dufour-Gergam, E. Finkman, G. Tremblay, F. Meyer and K. Bouziane, Appl. Surf. sci. 91, 342 (1995).

    Article  CAS  Google Scholar 

Download references

Author information

Author notes

  1. P. Warren

    Present address: France Telecom CNET, BP 98, 38243, Meylan Cedex, France

Authors and Affiliations

  1. IEF, CNRS URA 22, Bât. 220, Université Paris Sud, 91405, Orsay Cedex, France

    F. Meyer, M. Mamor & V. Aubry-Fortuna

  2. France Telecom CNET, BP 98, 38243, Meylan Cedex, France

    S. Bodnar, D. Dutartre & J. L. Regolini

Authors
  1. F. Meyer
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. M. Mamor
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. V. Aubry-Fortuna
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. P. Warren
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. S. Bodnar
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. D. Dutartre
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. J. L. Regolini
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Meyer, F., Mamor, M., Aubry-Fortuna, V. et al. Schottky barrier heights on IV-IV compound semiconductors. J. Electron. Mater. 25, 1748–1753 (1996). https://doi.org/10.1007/s11664-996-0030-3

Download citation

  • Received:

  • Accepted:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s11664-996-0030-3

Key words

Search

Navigation