Abstract
SnS and SnS:In films were deposited onto glass substrates by chemical bath technique. The structure and surface morphology of the SnS:In films were studied by X-ray diffraction (XRD) and scanning electron microscope (SEM) respectively. Energy dispersive spectroscopy (EDS) showed the existence of In in the films. The undoped SnS film exhibited a rather high resistivity and InCl3 could reduce the resistivity of these films by two orders approximately. The band gaps of the SnS and SnS:In films were evaluated from the optical transmission spectra.
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Project supported by the Science Foundation of Shanghai Municipal Commission of Science and Technology (Grant No.03DZ12033), and the Shanghai Leading Academic Discipline (Grant No.T0101)
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Ge, Yh., Guo, Yy., Shi, Wm. et al. Influence of In-doping on resistivity of chemical bath deposited SnS films. J. of Shanghai Univ. 11, 403–406 (2007). https://doi.org/10.1007/s11741-007-0417-1
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DOI: https://doi.org/10.1007/s11741-007-0417-1