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Design and fabrication of InP micro-ring resonant detectors

  • Optoelectronics Letters
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Abstract

The quantum efficiency and the transient response of the InP semiconductor micro-ring resonant detector are analyzed to get the optimum design parameters. Then the side coupling micro-ring resonant is fabricated using the InP semiconductor material based on the parameters. The micro-ring resonant cavity has the raius of 80 μm, waveguide width of 3 μm and the coupler gap of 1 μm. The test results show that the FSR is 0.75 nm, and the FWHM is 0.5 nm, which are consistent with the theoretical calculation results.

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Authors and Affiliations

  1. Key Laboratory of Optical Communication and Light wave Technologies, Ministry of Education, Beijing University of Posts and Telecommunications, Beijing, 100876, China

    Hai-ming Xin  (辛海明), Yong-qing Huang  (黄永清), Hai-bo Chen  (陈海波), Hui Huang  (黄辉), Xiaomin Ren  (任晓敏) & Xing-guang Zhou  (周星光)

Authors
  1. Hai-ming Xin  (辛海明)
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  2. Yong-qing Huang  (黄永清)
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  3. Hai-bo Chen  (陈海波)
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  4. Hui Huang  (黄辉)
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  5. Xiaomin Ren  (任晓敏)
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  6. Xing-guang Zhou  (周星光)
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Corresponding author

Correspondence to Hai-ming Xin  (辛海明).

Additional information

The work has been supported by National “973 Program” of China (2003CB314901), the Program for New Century Excellent Talents in University of China (NCET-05-0111), the National “111 Project” (B07005), and the National Program for Changjiang Scholars and Innovative Research Team in University of China (No.IRT0609)

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Xin, Hm., Huang, Yq., Chen, Hb. et al. Design and fabrication of InP micro-ring resonant detectors. Optoelectron. Lett. 5, 6–10 (2009). https://doi.org/10.1007/s11801-009-8118-7

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  • DOI: https://doi.org/10.1007/s11801-009-8118-7

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