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Low-temperature growth of highly conductive and transparent aluminum-doped ZnO film by ultrasonic-mist deposition

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Abstract

Aluminum-doped ZnO (AZO) thin films are grown by ultrasonic-mist deposition method for the transparent conducting oxides (TCO) applications at low temperatures. The AZO films can be grown at a temperature as low as 200 °C with zinc acetylacetonate and aluminum acetylacetonate sources. The lowest resistivity of grown AZO films is 1.0×10−3 Ω·cm and the lowest sheet resistance of 1 μm thick films is 10 Ω/□, which is close to that of commercial indium tin oxide (ITO) or Asahi U-type SnO2: F glass. The highest carrier concentration and mobility are 5.6×1020 cm−3 and 15 cm2/V·sec, respectively. Optical transmittance of the AZO films is found over 75% for all growth conditions. We believe that the properties of grown AZO films in this study are the best among all reported previously elsewhere by solution processes.

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Authors and Affiliations

  1. School of Chemical Engineering, Sungkyunkwan University, Suwon, 440-746, Korea

    Seung-Woo Seo, Heeyeop Chae & Sung Min Cho

  2. Department of Biochemical Engineering, Dongyang Mirae University, Seoul, 152-714, Korea

    Sung Ho Won

  3. Advanced Materials and Process Research Center for IT, Sungkyunkwan University, Suwon, 440-746, Korea

    Sung Min Cho

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  1. Seung-Woo Seo
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  2. Sung Ho Won
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  3. Heeyeop Chae
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Correspondence to Sung Min Cho.

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Seo, SW., Won, S.H., Chae, H. et al. Low-temperature growth of highly conductive and transparent aluminum-doped ZnO film by ultrasonic-mist deposition. Korean J. Chem. Eng. 29, 525–528 (2012). https://doi.org/10.1007/s11814-011-0207-1

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  • DOI: https://doi.org/10.1007/s11814-011-0207-1

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