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Iron oxide grown by low-temperature atomic layer deposition

  • Materials (Organic, Inorganic, Electronic, Thin Films)
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Abstract

Atomic layer deposition (ALD) is a promising technology for fabricating conformal thin films of atomlevel thickness with chemical composition control over a variety of structures. This paper demonstrates the ALD of iron oxide thin films using a novel iron precursor, namely, bis[bis(trimethylsilyl)amide]iron [Fe(btmsa)2] and hydrogen peroxide as an oxygen source. The growth characteristics of iron oxide were investigated by varying the deposition temperatures from 100 to 225 °C, such that the ALD growth mode was observed at 150 to 175 °C with an average growth rate of 0.035±0.005 nm/cycle. The films deposited in ALD mode exhibited highly linear film thicknesses with the number of cycles and excellent conformality over high-aspect-ratio trenches. In addition, the deposited films were extremely pure and revealed a hematite phase without any subsequent heat treatment, even if the films were deposited at low temperatures.

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Authors and Affiliations

  1. School of Chemical Engineering, Chonnam National University, 300 Youngbong-dong, Gwangju, 61186, Korea

    Seenivasan Selvaraj, Hee Moon & Do-Heyoung Kim

  2. Center for Vacuum, Korea Research Institute of Standards and Science, 267 Gajeong-ro, Daejeon, 34113, Korea

    Ju-Young Yun

Authors
  1. Seenivasan Selvaraj
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  2. Hee Moon
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  3. Ju-Young Yun
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  4. Do-Heyoung Kim
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Correspondence to Do-Heyoung Kim.

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Selvaraj, S., Moon, H., Yun, JY. et al. Iron oxide grown by low-temperature atomic layer deposition. Korean J. Chem. Eng. 33, 3516–3522 (2016). https://doi.org/10.1007/s11814-016-0319-8

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  • DOI: https://doi.org/10.1007/s11814-016-0319-8

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