Abstract
Aluminum-doped zinc oxide (AZO) target was fabricated using AZO nanopowders synthesized by co-precipitation method and then the AZO films with different thicknesses were deposited on glass by d.c. magnetron sputtering at room temperature. AZO target is nodules free and shows homogeneous microstructure, ultra-high density and low resistivity. ZnAl2O4 phase appears in AZO target and disappears in AZO films. All AZO films show c-axis preferred orientation and hexagonal structure. With increasing film thickness from 153 to 1404 nm, the crystallinity was improved and the angle of (002) peak was close to 34.45°. The increase in grain size and surface roughness is due to the increase in film thickness. The decrease of resistivity is ascribed to the increases of carrier concentration and Hall mobility. The lowest resistivity is 9.6 × 10−4 Ω·cm. The average transmittance of AZO films exceeds 80%, and a sharp fundamental absorption edge with red-shifting is observed in the visible range. The bandgap decreases from 3.26 to 3.02 eV.
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References
Chun B S, Wu H C, Abid M, Chu I C, Serrano-Guisan S, Shvets I V and Choi D S 2010 Appl. Phys. Lett. 97 082109
Dewald W, Sittinger V, Werner W, Jacobs C and Szyszka B 2009 Thin Solid Films 518 1085
Guilléna C and Herrero J 2010 Vacuum 84 924
Hélène S, Manuel G and Michel M 2009 Solid State Sci. 11 1192
Hsu C Y, Lin Y C, Kao L M and Lin Y C 2010 Mater. Chem. Phys. 124 330
Ishibashi S, Higuchi Y, Ota Y and Nakamura K 1990 J. Vac. Sci. Technol. A8 1403
Kaelin M, Rudmann D and Tiwari A N 2004 Sol. Energy 77 749
Katayama M 1999 Thin Solid Films 341 140
Kawada A 1990 Thin Solid Films 191 297
Kima D W, Sung Y J, Park J W and Yeom G Y 2001 Thin Solid Films 398–399 87
Klutha O, Rech B, Houben L, Wieder S, Schöpe G, Beneking C, Wagner H, Löffl A and Schock H W 1999 Thin Solid Films 351 247
Kuroyanagi A 1989 J. Appl. Phys. 66 5492
Lei B X, Liao J Y, Zhang R, Wang J, Su C Y and Kuang D B 2010 J. Phys. Chem. C114 15228
Li C, Furuta M, Matsuda T, Hiramatsu T, Furuta H and Hirao T 2009 Thin Solid Films 517 3265
Lodder J C, Wielinga T and Worst J 1983 Thin Solid Films 101 61
Long T, Zhu D and Wang L 2004 Electron. Comp. Mater. 23 31
Manifacier J C, Gasiot J and Fillard J P 1976 J. Phys. E: Sci. Instrum. 9 1002
Nadaud N, Nanot M and Boch P 1994 J. Am. Ceram. Soc. 77 843
Nakashima K and Kumahara Y 2002 Vacuum 66 221
Omata T, Kita M, Okada H, Otsuka S, Matsuo Y, Ono N and Ikawa H 2006 Thin Solid Films 503 22
Park J H, Ahn K J, Na S I and Kim H K 2011 Sol. Energy Mater. Sol. Cells 95 657
Shirouzu K, Ohkusa T, Hotta M, Enomoto N and Hojo J 2007 J. Ceram. Soc. Japan 115 254
Sittinger V, Dewald N, Werner W, Szyszka B and Ruske F 2009 Photovoltaics International 6 101
Sun Y H, Xiong W H, Li C H and Yuan L 2009 J. Am. Ceram. Soc. 92 2168
Swann S 1998 Phys. Technol. 19 67
Tak Y H, Kim K B, Park H G, Lee K H and Lee J R 2002 Thin Solid Films 411 12
Tark S J, Kang M G, Park S, Lee S H, Son C S, Lee J C and Kim D 2011 Curr. Appl. Phys. 11 362
Wang X, Bai X, Duan H, Shi Z, Sun J, Lu S and Huang S 2011 Trans. Nonferrous Met. Soc. China 21 1550
Zhang Y, Wang W, Tan R, Yang Y, Zhang X, Cui P and Song W 2012 Int. J. Appl. Ceram. Tech. 9 374
Zhu B L, Wang J, Zhu S J, Wu J, Zeng D W and Xie C S 2012 Phys. Status Solidi A 209 1251
Ziegler E, Heinrich A, Oppermann H and Stover G 1981 Phys. Status Solidi A 66 635
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Xu, J., Yang, Z., Wang, H. et al. Structural evolution, electrical and optical properties of AZO films deposited by sputtering ultra-high density target. Bull Mater Sci 37, 895–902 (2014). https://doi.org/10.1007/s12034-014-0023-4
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DOI: https://doi.org/10.1007/s12034-014-0023-4