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Electrical characteristics of Au/PVA (x-doped)/n-Si: Comparison study on the effect of dopant type in PVA

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Abstract

The main propose of this study is to investigate whether the doppant material in PVA would change the electrical characteristics of Au/PVA (X-doped) n-Si Schottky structure. Therefore, Au/PVA (Co, Zn-doped) n-Si (D1) and /PVA (Co, Ni-doped) n-Si (D2) Schottky structures were fabricated under the same condition using n-type (phosphor-doped) single crystal silicon wafer with (111) surface orientation. After the PVA/(Co-Zn) and PVA/(Co-Ni) acetates was obtained, the nanofiber film was fabricated on the silicon wafer by the use of an electrospinning technique. The results indicated that the electrical parameters of Au/PVA (x-doped) n-Si Schottky structure were significantly influenced from the doppant material in PVA. Comparative results on electrical parameters of D1 and D2 were reported in this study.

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Authors and Affiliations

  1. Science Education Department, Faculty of Gazi Education, Gazi University, Ankara, Turkey

    İlbilge Dökme & Şemsettin Altındal

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  1. İlbilge Dökme
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  2. Şemsettin Altındal
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Correspondence to İlbilge Dökme.

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Dökme, İ., Altındal, Ş. Electrical characteristics of Au/PVA (x-doped)/n-Si: Comparison study on the effect of dopant type in PVA. Fibers Polym 15, 2253–2259 (2014). https://doi.org/10.1007/s12221-014-2253-x

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  • DOI: https://doi.org/10.1007/s12221-014-2253-x

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