Abstract
We have fabricated an Al/n-Si/Bi4Ti3O12/Au photodiode by the sol-gel method. The photoelectrical response of the diode was measured under dark and various light intensity conditions. The photocurrent of the diode increases with increase in light intensity. The light sensitivity value of the photosensor was measured and observed to increase from 5.06 × 10−8 (under dark) to 2.34 × 10−4 A (under 100 mW/cm2). Furthermore, other parameters for instance, ideality factor and barrier height of the photosensors were calculated. The ideality factor and barrier height of the Al/n-Si/Bi4Ti3O12/Au photosensor were found to be 3.01 and 0.86 eV respectively. Also capacitance-voltage (C-V) characteristics were measured. The C-V graph indicates changeable behavior with the varying frequency. The value of capacitance and the interface state density Dit value decrease with increase in frequency. Thus, the obtained results indicate that the Al/n-Si/Bi4Ti3O12/Au photosensor can be used as a photosensor in optoelectronic applications.
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AL-Wafi, R. Optoelectronic Properties of Al/n-Si/ Bi4Ti3O12/Au Photosensor. Silicon 9, 657–661 (2017). https://doi.org/10.1007/s12633-016-9539-0
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DOI: https://doi.org/10.1007/s12633-016-9539-0