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Preparation of Ni doped ZnO thin films by SILAR and their characterization

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Abstract

Pure and nickel (Ni) doped zinc oxide (NZO) thin films were deposited on glass substrates from ammonium zincate bath using successive ion layer adsorption and reaction (SILAR). Characterization techniques such as XRD, TEM, SEM and EDX were utilized to investigate the effect of Ni doping on the microstructure of Ni:ZnO thin films. Structural characterization by X-ray diffraction reveals the polycrystalline nature of the films. Particle size shows slightly decreasing trend with increasing nickel impurification. The average particle size for pure ZnO is 22.75 nm and it reduces to 20.51 nm for 10 % Ni doped ZnO. Incorporation of Ni was confirmed from elemental analysis using EDX. The value of fundamental absorption edge is 3.23 eV for pure ZnO and it decreases to 3.19 eV for 10 % Ni:ZnO. The activation energy barrier value to electrical conduction process increases from 0.261 eV for pure ZnO to 0.293 eV for 10 % Ni doped ZnO.

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Acknowledgments

One of the authors (PM) gratefully acknowledges Council of Scientific and Industrial Research (CSIR, New Delhi, India) for providing some financial support in the form of a research project [No. 03 (1195)/11/EMR-II].

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  1. Department of Physics, The University of Burdwan, Golapbag, Burdwan, 713 104, West Bengal, India

    S. Mondal & P. Mitra

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  1. S. Mondal
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  2. P. Mitra
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Correspondence to P. Mitra.

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Mondal, S., Mitra, P. Preparation of Ni doped ZnO thin films by SILAR and their characterization. Indian J Phys 87, 125–131 (2013). https://doi.org/10.1007/s12648-012-0198-8

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