Abstract
The effects of Sn layer orientation on the evolution of Cu/Sn joint interfaces were investigated. Three Sn layers possessing (112), (321) and (420) orientations were electroplated on polycrystalline Cu substrates respectively. The orientations of Sn layer preserved during reflowing at 250 °C for 10 s. After aging at 150 °C for different time, the interfacial microstructures were observed from the cross-section and top-view. The alignment between the c-axis of Sn and Cu diffusion direction significantly sped up the Cu diffusion, leading to the thickest intermetallic compound layer formed in (112) joint. Two types of voids, namely, intracrystalline voids and grain islanding caused intercrystalline voids generated at Cu/Cu3Sn interfaces due to the different interdiffusion coefficients of Cu and Sn (112) oriented Sn/Cu joint produced many more voids than (321) joint, and no voids were detected in (420) joint. Therefore, to enhance the reliability of solder joints, using (420) oriented Sn as solder layer could be an efficient way.
Similar content being viewed by others
References
Chiang, H.W., Chen, J.Y., Lee, J., Li, S.M.: Interfacial reaction study on a solder joint with Sn–4Ag–0.5Cu solder ball and Sn–7Zn–Al (30 ppm) solder paste in a lead-free wafer level chip scale package. J. Electron. Mater. 33, 1550 (2004)
Kang, S.K., Sarkhel, A.K.: Effects of mechanical deformation and annealing on the microstructure and hardness of Pb-free solders. J. Electron. Mater. 32, 1432 (2003)
Wu, C.M.L., Huang, M.L.: Creep behavior of eutectic Sn–Cu lead-free solder alloy. J. Electron. Mater. 31, 828 (2002)
Lu, M., Shih, D.Y., Lauro, P., Goldsmith, C., Henderson, D.W.: Effect of Sn grain orientation on electromigration degradation mechanism in high Sn-based Pb-free solders. Appl. Phys. Lett. 92, 211909 (2008)
Yeh, D., Huntington, H.: Extreme fast-diffusion system: nickel in single-crystal tin. Phys. Rev. Lett. 53, 1469 (1984)
Cheng, P.J., Chung, C.M., Pai, T.M. Chen, D.Y. Electron. In 60th IEEE electronic components and technology conference (ECTC), p. 1618 (2010)
Huang, J.T., Chao, P.S., Hsu, H.J., Shih, S.H.: A novel bumping process for fine pitch Sn–Cu lead-free plating-based flip chip solder bumps. Mater. Sci. Semicond. Process. 10, 133 (2007)
Li, H., An, R., Wang, C., Tian, Y., Jiang, Z.: Effect of Cu grain size on the voiding propensity at the interface of SnAgCu/Cu solder joints. Mater. Lett. 144, 97 (2015)
Dyson, B.F., Anthony, T.R., Turnbull, D.: Interstitial diffusion of copper in Tin. J. Appl. Phys. 38, 3408 (1967)
Zou, H.F., Yang, H.J., Zhang, Z.F.: Morphologies, orientation relationships and evolution of Cu6Sn5 grains formed between molten Sn and Cu single crystals. Acta Mater. 56, 2649 (2008)
Shang, P.J., Liu, Z.Q., Pang, X.Y., Li, D.X., Shang, J.K.: Growth mechanisms of Cu3Sn on polycrystalline and single crystalline Cu substrates. Acta Mater. 57, 4697 (2009)
Hsu, W.N., Ouyang, F.Y.: Effects of anisotropic β–Sn alloys on Cu diffusion under a temperature gradient. Acta Mater. 81, 141 (2014)
Thiemig, D., Bund, A.: Characterization of electrodeposited Ni–TiO2 nanocomposite coatings. Surf. Coat. Technol. 202, 2976 (2008)
Yang, S., Peng, L., Tao, Y.S., Hu, Li, M: In: 15th International Conference Electronic Package Technology (ICEPT), p 121 (2014)
Labie, R., Ruythooren, W., Van Humbeeck, J.: Solid state diffusion in Cu–Sn and Ni–Sn diffusion couples with flip-chip scale dimensions. Intermetallics 15, 396 (2007)
Ouyang, F.Y., Kao, C.L.: In situ observation of thermomigration of Sn atoms to the hot end of 96.5 Sn–3Ag–0.5 Cu flip chip solder joints. J. Appl. Phys. 110, 123525 (2011)
Guo, M.Y., Lin, C., Chen, C., Tu, K.: Asymmetrical growth of Cu6Sn5 intermetallic compounds due to rapid thermomigration of Cu in molten SnAg solder joints. Intermetallics 29, 155 (2012)
Huang, F., Huntington, H.: Diffusion of Sb 124, Cd 109, Sn 113, and Zn 65 in tin. Phys. Rev. B. 9, 1479 (1974)
Paul, A., Ghosh, C., Boettinger, W.J.: Diffusion parameters and growth mechanism of phases in the Cu–Sn system. Metall. Mater. Trans. A 42, 952 (2011)
Yang, Y., Lu, H., Yu, C., Li, Y.: Void formation at the interface in Sn/Cu solder joints. Microelectron. Reliab. 51, 2314 (2011)
Yang, W., Messler, R.W., Felton, L.E.: Microstructure evolution of eutectic Sn–Ag solder joints. J. Electron. Mater. 23, 765 (1994)
Yu, J., Kim, J.Y.: Effects of residual S on Kirkendall void formation at Cu/Sn–3.5 Ag solder joints. Acta Mater. 56, 5514 (2008)
Liu, B.T., Yang, L., Li, X.H., Wang, K.M., Guo, Z., Chen, J.H., Li, M., Zhao, D.Y., Zhao, Q.X., Zhang, X.Y.: Ultrathin amorphous Ni–Ti film as diffusion barrier for Cu interconnection. Appl. Surf. Sci. 257, 2920 (2011)
Hayes, W., Stoneham, A.M.: Defects and Defect Processes in Nonmetallic Solid, pp. 163–170. Courier Dover Publications, Mineola (2004)
Zhang, Q.K., Zhang, Z.F.: In-situ observations on fracture behaviors of Cu–Sn IMC layers induced by deformation of Cu substrates. Mater. Sci. Eng. A 530, 452 (2011)
Yu, J.J., Yang, C.A., Lin, Y.F., Hsueh, C.H., Kao, C.R.: Optimal Ag addition for the elimination of voids in Ni/SnAg/Ni micro joints for 3D IC applications. J. Alloy. Compd. 629, 16 (2015)
Acknowledgements
This work is sponsored by National Nature Science foundation of China (61376107) and the National Basic Research Program of China (973 Program, 2015CB057200). We also thank the Instrumental Analysis Center of Shanghai Jiaotong University for the use of SEM/EDX equipment.
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Sun, M., Zhao, Z., Hu, F. et al. Effects of Sn Layer Orientation on the Evolution of Cu/Sn Interfaces. Electron. Mater. Lett. 14, 526–532 (2018). https://doi.org/10.1007/s13391-018-0048-8
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s13391-018-0048-8