Skip to main content
Log in

Review on optical, structural and electrical properties of ZnTe thin films: effect of deposition techniques, annealing and doping

  • Review Paper
  • Published:
ISSS Journal of Micro and Smart Systems Aims and scope Submit manuscript

Abstract

Zinc Telluride (ZnTe) has become a very fascinating research material for the scientists over past many years. This p type semiconducting material has a wide band gap, which makes it useful in many optoelectronic applications such as solar cells, light emitting diodes, laser screens etc. With the desire for eco-friendly alternative energy resources, it excites to investigate potential semiconducting materials at nano scale for solar cell applications. Due to direct, wide and controllable optical band gap of ZnTe with easy doping makes it a potential material for photoelectrochemical applications. In the present work, an attempt has been made to compile the work done by various researchers on optical properties (band gap, refractive index and absorption/transmission spectra, etc.), structural properties (crystallite/grain size, lattice constant and Zn:Te, etc.) and electrical properties (resistivity, activation energy, carrier concentration and hall mobility, etc.) of ZnTe thin films with main emphasis on the effect of deposition techniques, doping and annealing on these properties. Most of the thin films reported in literature shown polycrystalline cubic structure. It is found that annealed ZnTe thin films show enhanced optical, structural and electrical properties at different annealing temperatures. Doping methods used by various researchers have been discussed in detail and results show good doping impact on these properties as well.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Fig. 1
Fig. 2
Fig. 3

Similar content being viewed by others

References

  • Abrikosov NK, Bankina VF, Poretskaya LV, Shelimova LE, Skudnova EV (1969) Semiconducting II-VI, IV-VI, and V-VI compounds. Plenum Press, New York

    Book  Google Scholar 

  • Achharya KP, Erlacher A, Ullrich B (2007) Optoelectronic properties of ZnTe/Si heterostructures formed by nanosecond laser deposition at different Nd:YAG laser lines. Thin Solid Films 515:4066–4069

    Article  Google Scholar 

  • Akkad FE, Abdulraheem Y (2013) Morphology, electrical, and optical properties of heavily doped ZnTe: Cu thin films. J Appl Phys 114:183501

    Article  Google Scholar 

  • Aqili AKS, Ali Z, Maqsood A (2011) Characterization of zinc telluride thin films deposited by two-source technique and post-annealed in nitrogen ambient. J Cryst Growth 317:47–51

    Article  Google Scholar 

  • Aqili AKS, Saleh AJ, Ali Z, Al-Omari S (2012) Ag doped ZnTe films prepared by closed space sublimation and an ion exchange process. J Alloys Compd 520:83–88

    Article  Google Scholar 

  • Bacaksiz E, Aksu S, Ozer N, Tomakin M, Özçelik A (2009) The influence of substrate temperature on the morphology, optical and electrical properties of thermal-evaporated ZnTe thin films. Appl Surf Sci 256:1566–1572

    Article  Google Scholar 

  • Baghchesara MA, Yousefi R, Cheraghizade M, Sheini FJ, Sáaedi A (2015) Photocurrent application of Cd-doped ZnTe nanowires grown in a large scale by a CVD Method. Vacuum 123:131–135

    Article  Google Scholar 

  • Beke S (2011) A review of the growth of V2O5 films from 1885 to 2010. Thin Solid Films 519:1761–1771

    Article  Google Scholar 

  • Bellakhder H, Outzourhit A, Ameziane EL (2001) Study of ZnTe thin films deposited by r.f. sputtering. Thin Solid Films 382:30–33

    Article  Google Scholar 

  • Bhargava R (1997) Properties of wide band gap II–VI semiconductors. INSPEC/The Institution of Electrical Engineers, London

    Google Scholar 

  • Bhatti MT, Raza MI, Rana AM (2004) Study of the optical properties of ZnTe thin films for use in photovoltaic cells. J Res (Sci) 15:369–375

    Google Scholar 

  • Chandhuri S, Pal AK (2001) Optical processes in nanocrystalline semiconductor materials. Proc Natl Sci Acad 67A:131–143

    Google Scholar 

  • Chang JH, Takai T, Godo K, Song JS, Koo BH, Hanada T, Yao T (2002) ZnTe-based light-emitting-diodes grown on ZnTe substrates by molecular beam epitaxy. Phys Status Solidi B 229:995–999

    Article  Google Scholar 

  • Contreras M, Egaas B, Ramanathan K, Hiltner J, Swartzlander A, Hasoon F, Noufi R (1999) Progress toward 20% effciency in Cu(In, Ga)Se2 polycrystalline thin-film solar cells. Prog Photovolt 7:311–316

    Article  Google Scholar 

  • De Merchant J, Cocivera M (1996) Properties of zinc telluride containing impurities introduced during spray pyrolysis. J Electrochem Soc 143:4054–4059

    Article  Google Scholar 

  • Erlacher A, Ambrico M, Perna G, Schiavulli L, Ligonzo T, Jaeger H, Ullrich B (2005) Absorption and photoconductivity properties of ZnTe thin films formed by pulsed-laser deposition on glass. Appl Surf Sci 248:402–405

    Article  Google Scholar 

  • Fang F, Mc Candless BE, Opila RL (2009) Chemical and electrical properties of ZnTe based solar cells. Proceedings of the 34th IEEE Photovoltaic Specialists Conference, pp. 001258-001263, 2009

  • Farooq MU, Khan M, Faraz A, Maqsood A, Ahmad W, Li L (2014) Comparative study of ZnTe thin films prepared using close space sublimation (CSS) and electron beam evaporation (EBE) thin film fabrication techniques for optoelectronic applications. Mater Technol 29:29–35

    Article  Google Scholar 

  • Feng L, Mao D, Tang J, Collins RT, Trefny JU (1996) The structural, optical, and electrical properties of vacuum evaporated Cu-doped ZnTe polycrystalline thin films. J Electron Mater 25:1422–1427

    Article  Google Scholar 

  • Franta D, Ohlídal I, Klapetek P, Ramil AM, Bonanni A, Stifter D, Sitter H (2004) Optical properties of ZnTe films prepared by molecular beam epitaxy. Thin Solid Films 468:193–202

    Article  Google Scholar 

  • Gangopadhyay U, Kim K, Mangalaraj D, Yi J (2004) Low cost CBD ZnS antireflection coating on large area commercial mono-crystalline silicon solar cells. Appl Surf Sci 230:364–370

    Article  Google Scholar 

  • Garcia JA, Remón A, Munõz V, Triboulet R (2000) Annealing-induced changes in the electronic and structural properties of ZnTe substrates. J Mater Res 15:1612–1616

    Article  Google Scholar 

  • Gashin P, Focsha A, Potlog T, Simashkevich AV, Leondar V (1997) n-ZnSe/p-ZnTe/n-CdSe tandem solar cells. Sol Energy Mater Sol Cells 46:323–331

    Article  Google Scholar 

  • Gessert TA, Mason AR, Reedy RC, Matson R, Coutts TJ, Sheldon P (1995) Development of rf sputtered, Cu-doped ZnTe as a contact interface layer to p-CdTe. J Electron Mater 24:1443–1449

    Article  Google Scholar 

  • Gessert TA, Sheldon P, Li X, Dunlavy D, Sasala R, Albright S, Zadler B (1997) Studies of ZnTe back contacts to CdS/CdTe Solar cells. Proceedings of the 26th IEEE Photovoltaic Specialists Conference, pp. 419–422, 1997

  • Gul Q, Zakria M, Khan TM, Mahmood A, Iqbal A (2014) Effects of Cu incorporation on physical properties of ZnTe thin films deposited by thermal evaporation. Mater Sci Semicond Process 19:17–23

    Article  Google Scholar 

  • Hossain MS, Islam R, Khan KA (2008) Temperature effect on the electrical properties of undoped and vanadium-doped ZnTe thin films. Renew Energy 33:642–647

    Article  Google Scholar 

  • Hossain MI, Kamruzzaman M, Islam ABMO (2015) Effects of temperature in electrodeposition of ZnTe thin films. J Mater Sci 26:1756–1762

    Google Scholar 

  • Hsu C-H, Tseng C-F, Yu Y-T, Yang P-C, Lai C-H, Lin J-S, Yang H-W (2013) Effect of annealing temperature on electrical properties of ZnTe layers grown by thermal evaporation. Adv Mat Res 608:1314–1317

    Google Scholar 

  • Hussain T, Kuhaili MFA, Durrani SMA, Qayyum HA (2018) Influence of angle deposition on the properties of ZnTe thin films prepared by thermal evaporation. Ceram Int 44:10130–10140

    Article  Google Scholar 

  • Ibrahim AA (2006) DC electrical conduction of zinc telluride thin films. Vacuum 81:527–530

    Article  Google Scholar 

  • Ibrahim AA, El-Sayed NZ, Kaid MA, Ashour A (2004) Structural and electrical properties of evaporated ZnTe thin films. Vacuum 75:189–194

    Article  Google Scholar 

  • Ignatowicz S, Kobendza A (1981) Semiconducting thin films of AIIBVI compounds. Wiley, New York

    Google Scholar 

  • Jayakrishnan R (2008) Defect analysis of semiconductor thin films for photovoltaic applications using photo-luminescence and photoconductivity. Ph.D thesis, Dept. of Physics, Cochin University

  • Jeetendra S, Naveen CS, Raghu P, Mahesh HM (2014) Optimization of thickness of ZnTe thin film as back contact for CdTe thin film solar cells. Int J Eng Res Tech 3:431–435

    Article  Google Scholar 

  • Jiao SJ, Zhang ZZ, Lu YM, Shen DZ, Yao B, Zhang JY, Li BH, Zhao DX, Fan XW, Tang ZK (2006) ZnO p-n junction light-emitting diodes fabricated on sapphire substrates. Appl Phys Lett 88:031911

    Article  Google Scholar 

  • Kale SS, Mane RS, Pathan HM, Shaikh AV, Joo O-S, Han S-H (2007) Preparation and characterization of ZnTe thin films by SILAR method. Appl Surf Sci 253:4335–4337

    Article  Google Scholar 

  • Kalita PK, Sarma BK, Das HL (1999) Photoresponse characteristics of vacuum evaporated ZnTe thin films. Ind J Pure Appl Phys 37:885–890

    Google Scholar 

  • Kashyout AB, Aricò AS, Antonucci PL, Mohamed FA, Antonucci V (1997) Influence of annealing temperature on the opto-electronic characteristics of ZnTe electrodeposited semiconductors. Mater Chem Phys 51:130–134

    Article  Google Scholar 

  • Kshirsagar SD, Krishna GM, Tewari SP (2013) Optical characteristics of wurtzite ZnTe thin films. Mater Sci Semicond Process 16:1002–1007

    Article  Google Scholar 

  • Lastra G, Luque PA, Quevedo-Lopez MA, Olivas A (2014) Electrical properties of p-type ZnTe thin films by immersion in Cu solution. Mater Lett 126:271–273

    Article  Google Scholar 

  • Lee KS, Oh G, Kim EK (2015) Growth of p-type ZnTe thin films by using nitrogen doping during pulsed laser deposition. J Korean Phys Soc 67:672–675

    Article  Google Scholar 

  • Liu K, Kang H-S, Kim T-K, Zhang X-C (2002) Study of ZnCdTe crystals as terahertz wave emitters and detectors. Appl Phys Lett 81:4115–4117

    Article  Google Scholar 

  • Liu W, Gu SL, Ye JD, Zhu SM, Liu SM, Zhou X, Zhang R, Shi Y, Zheng YD, Hang Y, Zhang CL (2006) Blue-yellow ZnO homostructural light-emitting diode realized by metalorganic chemical vapor deposition technique. Appl Phys Lett 88:092101

    Article  Google Scholar 

  • Ma Z, Liu L, Yu KM, Walukiewicz W, Perry DL, Yu PY, Mao SS (2008) Experimental and theoretical studies on gadolinium doping in ZnTe. J Appl Phys 103:023711

    Article  Google Scholar 

  • Mahalingam T, John VS, Rajendran S, Sebastian PJ (2002a) Electrochemical deposition of ZnTe thin films. Semicond Sci Technol 17:465–470

    Article  Google Scholar 

  • Mahalingam T, John VS, Rajendran S, Ravi G, Sebastian PJ (2002b) Annealing studies of electrodeposited zinc telluride thin films. Surf Coat Technol 155:245–249

    Article  Google Scholar 

  • Mahalingam T, Dhanasekaran V, Sundaram K, Kathalingam A, Rhee J-K (2012) Characterization of electroplated ZnTe coatings. Ionics 18:299–306

    Article  Google Scholar 

  • Mahmood W, Shah NA (2014) Effects of metal doping on the physical properties of ZnTe thin films. Curr Appl Phys 14:282–286

    Article  Google Scholar 

  • Mahmood A, Shaista R, Shah A, Aziz U, Ahmed E, Ali S, Raza Q (2011) Ellipsometric analysis of Cd1−xZnxSe thin films prepared by a thermal evaporation technique. Phys Scr 83:065706

    Article  Google Scholar 

  • Mahmood A, Rashid R, Aziz U, Shah A, Ali Z, Raza Q, Ashraf T (2015) Structural and optical properties of Zn1−xNixTe thin films prepared by electron beam evaporation technique. Prog Nat Sci 25:22–28

    Article  Google Scholar 

  • Malik MA (2013) 4.09 – Compound semiconductors: chalcogenides. Compr Inorg Chem II (Second Edition) 4:177–210

    Article  Google Scholar 

  • Millerd JE, Brock NJ, Brown MS, DeBarber PA, Trivedi S (1996) Resonant holographic interferometry with ZnTe:V:Mn. Appl Opt 35:5275–5285

    Article  Google Scholar 

  • Mirov SB, Fedorov VV, Moskalev IS, Martyshkin DV (2007) Recent progress in transition-metal-doped II–VI Mid-IR lasers. IEEE J Sel Top Quantum Electron 13:810–822

    Article  Google Scholar 

  • Mochizuki K, Terano A, Momose M, Taike A, Kawata M, Gotoh J, Nakatsuka S (1995) Crystallographic microstructure and electrical characteristics of Au/Pt/Ti/Ni ohmic contacts on p-type (001) ZnTe layers. J Appl Phys 78:3216–3220

    Article  Google Scholar 

  • Mohan S, Venkataciialam R (1998) Brush plating - present state of art. Bull Electrochem 14:472–475

    Google Scholar 

  • Murali KR, Ziaudeen M, Jayaprakash N (2006) Structural and electrical properties of brush plated ZnTe films. Solid-State Electron 50:1692–1695

    Article  Google Scholar 

  • Nakasu T, Aiba T, Yamashita S, Hattori S, Sun W, Taguri K, Kazami F, Kobayashi M, Asahi T (2015) Control of domain orientation during the MBE growth of ZnTe on a-plane sapphire. J Cryst Growth 425:191–194

    Article  Google Scholar 

  • Nakasu T, Sun W, Kobayashi M, Asahi T (2017) Effect of Zn and Te beam intensity upon the film quality of ZnTe layers on severely lattice mismatched sapphire substrates by molecular beam epitaxy. J Cryst Growth 468:635–637

    Article  Google Scholar 

  • Nishio M, Guo Q, Ogawa H (1999) Effect of dopant flow rate upon photoluminescence properties in aluminum-doped ZnTe layers grown by MOVPE. Thin Solid Films 343–344:512–515

    Article  Google Scholar 

  • Nishio M, Hayashida K, Guo Q, Ogawa H (2001) Effect of VI/II ratio upon photoluminescence properties of aluminum-doped ZnTe layers grown by MOVPE. Appl Surf Sci 169:223–226

    Article  Google Scholar 

  • Ota T, Takahashi K (1973) Non-polarized memory-switching characteristics of ZnTe thin films. Solid-State Electron 16:1089–1096

    Article  Google Scholar 

  • Pal U (1993) Dark- and photoconductivity in doped and undoped zinc telluride films. Semicond Sci Technol 8:1331–1336

    Article  Google Scholar 

  • Patra S, Pardhan SK (2012) Microstructural, optical and quantum confinement effect study of mechanically synthesized ZnTe quantum dots. Acta Mater 60:131–138

    Article  Google Scholar 

  • Pattar J, Sawant SN, Nagaraja M, Shashank N, Balakrishna KM, Sanjeev G, Mahesh HM (2009) Structural optical and electrical properties of vacuum evaporated indium doped zinc telluride thin films. Int J Electrochem Sci 4:369–376

    Google Scholar 

  • Potlog T, Maticiuc N, Mirzac A, Dumitriu P, Scortescu D (2012) Structural and optical properties of ZnTe thin films. Proceedings of the International Semiconductor Conference, pp 321–324, 2012

  • Raj CSA, Xavier FP (2013) Effect of post deposition annealing on the optical absorption and photoconductivity studies of pure ZnTe and pure MgPc thin films formed by vacuum deposition. Arch Appl Sci Res 5:167–171

    Google Scholar 

  • Raju KN, Vijayalakshmi RP, Venugopal R, Reddy DR, Reddy BK (1992) Effect of substrate temperature on the structural, optical and electrical properties of vacuum-evaporated ZnTe films. Mater Lett 13:336–341

    Article  Google Scholar 

  • Rakhshani AE (2013) Effect of growth temperature, thermal annealing and nitrogen doping on optoelectronic properties of sputter-deposited ZnTe films. Thin Solid Films 536:88–93

    Article  Google Scholar 

  • Ramanathan K, Contreras MA, Perkins CL, Asher S, Hasoon FS, Keane J, Young D, Romero M, Metzger W, Noufi R, Ward J, Duda A (2003) Properties of 19.2% efficiency ZnO/CdS/CuInGaSe2 thin-film solar cells. Prog Photovolt 11:225–230

    Article  Google Scholar 

  • Rao GK, Bangera KV, Shivakumar GK (2009) The effect of substrate temperature on the structural, optical and electrical properties of vacuum deposited ZnTe thin films. Vacuum 83:1485–1488

    Article  Google Scholar 

  • Rao GK, Bangera KV, Shivakumar GK (2010a) Studies on the photoconductivity of vacuum deposited ZnTe thin films. Mater Res Bull 45:1357–1360

    Article  Google Scholar 

  • Rao GK, Shivakumar GK, Kasturi VB (2010b) The p-type doping of vacuum deposited ZnTe thin films with bismuth by a new technique of using nano-spheres. Mater Sci Eng B 175:185–188

    Article  Google Scholar 

  • Rohatgi A, Ringel SA, Sudharsanan R, Meyers PV, Liu CH, Ramanathan V (1989) Investigation of polycrystalline CdZnTe, CdMnTe, and CdTe films for photovoltaic applications. Sol Cells 27:219–230

    Article  Google Scholar 

  • Ruda HE (1992) Widegap II-VI compounds for Opto-electronic Applications. Chapman & Hall, London

    Book  Google Scholar 

  • Salem AM, Dahy TM, El-Gendy YA (2008) Thickness dependence of optical parameters for ZnTe thin films deposited by electron beam gun evaporation technique. Phys B 403:3027–3033

    Article  Google Scholar 

  • Sarma R, Mazumdar N, Das HL (2006) Some spectral response characteristics of ZnTe thin films. Bull Mater Sci 29:15–16

    Article  Google Scholar 

  • Sato K, Katayama-Yoshida H (2001) Hyperfine interactions and magnetism of 3d transition-metal-impurities in II–VI and III–V compound-based diluted magnetic semiconductors. Hyperfine Interact 136:737–742

    Article  Google Scholar 

  • Schrier J, Demchenko DO, Wang L, Alivisatos AP (2007) Optical properties of ZnO/ZnS and ZnO/ZnTe heterostructures for photovoltaic applications. Nano Lett 7:2377–2382

    Article  Google Scholar 

  • Shan CX, Fan XW, Zhang JY, Zhang ZZ, Wang XH, Ma JG, Lu YM, Liu YC, Shen DZ, Kong XG, Zhong GZ (2002) Structural and luminescent properties of ZnTe film grown on silicon by metalorganic chemical vapor deposition. J Vac Sci Technol 20:1886–1890

    Article  Google Scholar 

  • Shanmugan S, Balaji S, Ramanathan K (2009) Synthesis of ZnTe thin film using stacked elemental layer method: structural studies. Optoelectron Adv Mater 3:468–471

    Google Scholar 

  • Sharma DC, Srivastava S, Vijay YK, Sharma YK (2013) Preparation and characterization of the chromium doped ZnTe thin films. Adv Mater Lett 4:68–70

    Article  Google Scholar 

  • Sharma J, Singh H, Singh T (2017a) Study of the mobility activation in ZnSe thin films deposited using inert gas condensation. J Sci 2:432–436

    Google Scholar 

  • Sharma J, Singh R, Singh H, Singh T, Singh P, Thakur A, Tripathi SK (2017b) Synthesis of SnSe2 thin films by thermally induced phase transition in SnSe. J Alloys Compd 724:62–66

    Article  Google Scholar 

  • Sharma J, Singh H, Singh T, Thakur A (2018) Structural, optical and photo-electrical properties of nanocrystalline ZnSe thin films. J Mater Sci 29:5688–5695

    Google Scholar 

  • Shen Q, Kobayashi J, Diguna LJ, Toyoda T (2008) Effect of ZnS coating on the photovoltaic properties of CdSe quantum dot-sensitized solar cells. J Appl Phys 103:084304

    Article  Google Scholar 

  • Sidorov YG, Yakushev MV, Pridachin DN, Varavin VS, Burdina LD (2000) The heteroepitaxy of II–VI compounds on the non-isovalent substrates (ZnTe/Si). Thin Solid Films 367:203–209

    Article  Google Scholar 

  • Singh H, Singh T, Thakur A, Sharma J (2018a) Structural analysis of nanocrystalline ZnTe alloys synthesized by melt quenching technique. AIP Conf Proc 1953:030073

    Article  Google Scholar 

  • Singh H, Duklan N, Singh T, Thakur A, Sharma J (2018b) Effect of vacuum annealing on structural and optical properties of nanocrystalline ZnTe thin films. J Mater Sci 29:4992–4998

    Google Scholar 

  • Singh H, Singh P, Thakur A, Singh T, Sharma J (2018c) Nanocrystalline ZnxTe100−x (x = 0, 5, 20, 30, 40, 50) thin films: structural, optical and electrical properties. Mater Sci Semicond Process 75:276–282

    Article  Google Scholar 

  • Singh H, Singh T, Thakur A, Sharma J (2018d) Optical parameters of nanocrystalline Zn40Te60 thin films. Int J Adv Res Sci Eng 7:214–219

    Google Scholar 

  • Smith DJ, Tsen SCY, Chen YP, Faurie JP, Sivananthan S (1995) Microstructure of heteroepitaxial CdTe grown on misoriented Si (001) substrates. Appl Phys Lett 67:1591–1593

    Article  Google Scholar 

  • Späth B, Fritsche J, Säuberlich F, Klein A, Jaegermann W (2005) Studies of sputtered ZnTe films as interlayer for the CdTe thin film solar cell. Thin Solid Films 480–481:204–207

    Article  Google Scholar 

  • Tamargo MC (2002) II-VI semiconductor materials and their applications. Taylorand Francis, New York

    Google Scholar 

  • Tanaka T, Yu KM, Stone PR, Beeman JW, Dubon OD, Reichertz LA, Kao VM, Nishio M, Walukiewicz W (2010) Demonstration of homojunction ZnTe solar cells. J Appl Phys 108:024502

    Article  Google Scholar 

  • Tanaka T, Ohshita H, Saito K, Guo Q (2018) Photoluminescence of ZnTe/ZnMgTe multiple quantum well structures grown on ZnTe substrates by molecular beam epitaxy. Superlattices Microstruct 114:192–199

    Article  Google Scholar 

  • Ueta A, Hommel D (2002) New concept for ZnTe-based homoepitaxial light-emitting diodes grown by molecular beam epitaxy. Phys Status Solidi A 192:177–182

    Article  Google Scholar 

  • Wang YJ, Iwanczyk JS, Patt BE (1994) New concepts for scintillator/HgI2 gamma ray spectroscopy. IEEE Trans Nucl Sci 41:910–914

    Article  Google Scholar 

  • Wennewisser C, Jepson PU, Schall M, Schyja V, Helm H (1997) Electro-optic detection of THz radiation in LiTaO3, LiNbO3 and ZnTe. Appl Phys Lett 70:3069–3071

    Article  Google Scholar 

  • Wu X, Keane JC, Dhere RG, Dehart C, Duda A, Gessert TA, Asher S, Levi DH, Sheldon P (2001) 16.5%-efficient CdS/CdTe polycrystalline thin-film solar cell. Proceedings 17th European Photovoltaic Solar Energy Conference, Munich, pp. 995–1000, 2001

  • Yoshino K, Memon A, Yoneta M, Ohmori K, Sato H, Ohishi M (2002) Optical characterization of the ZnTe pure-green LED. Phys Status Solidi B 229:977–980

    Article  Google Scholar 

  • Yoshino K, Yoneta M, Ohmori K, Saito H, Ohishi M, Yabe T (2004) Annealing effects of a high-quality ZnTe substrate. J Electron Mater 33:579–582

    Article  Google Scholar 

  • Zhang Z, Li J, Zhang H, Pan X, Xie E (2013) Thickness-dependent field emission from ZnTe films prepared by magnetron sputtering. J Alloys Compd 549:88–91

    Article  Google Scholar 

  • Zhang L, Liu C, Yang Q, Cui L, Zeng Y (2015) Growth and characterization of highly nitrogen doped ZnTe films on GaAs (001) by molecular beam epitaxy. Mater Sci Semicond Process 29:351–356

    Article  Google Scholar 

Download references

Acknowledgements

One of the authors (Tejbir Singh) is thankful to SERB (Project No. SR/FTP/PS-081/2012) for the financial assistance.

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to Jeewan Sharma.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Singh, H., Singh, T. & Sharma, J. Review on optical, structural and electrical properties of ZnTe thin films: effect of deposition techniques, annealing and doping. ISSS J Micro Smart Syst 7, 123–143 (2018). https://doi.org/10.1007/s41683-018-0026-2

Download citation

  • Received:

  • Revised:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s41683-018-0026-2

Keywords

Navigation