Materials of construction for silicon crystal growth☆
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Cited by (14)
Mechanisms of graphite crucible degradation in contact with Si–Al melts at high temperatures and vacuum conditions
2020, VacuumCitation Excerpt :Repetitive melting and solidifying of silicon in high temperature batteries makes it necessary to find an appropriate refractory material for the melt container. Molten Si and its alloys are highly reactive to the point of being labeled “a universal solvent” [7]. Among the metal carbides (WC, TiC, ZrC, SiC and TaC), oxides (Al2O3), and nitrides (Si3N4) that are tested for holding Si melts, graphite has become the most applicable and well-known refractory material for treating Silicon (Si) melts especially in high temperatures and vacuum conditions [7–11].
Wetting and adhesion in liquid silicon/ceramic systems
1992, Materials LettersSubstrate development for the growth of silicon foils by Ramp Assisted Foil Casting Technique (RAFT)
1990, Journal of Crystal GrowthDevelopment and evaluation of refractory CVD coatings as contact materials for molten silicon
1980, Journal of Crystal GrowthMicroelectronic materials
2017, Microelectronic Materials
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This work was performed for the Jet Propulsion Laboratory, California Institute of Technology, under NASA Contract NAS7–100 for the US Department of Energy, Division of Solar Energy. The JPL Low-Cost Solar Array Project is funded by DOE and forms a part of the DOE Photovoltaic conversion Program to initiate a major effort toward the development of low-cost solar arrays.