Incorporation and activation of group V elements in MOVPE-grown CdxHg1-xTe

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Abstract

Reproducible acceptor doping has been achieved in MOVPE-grown layers of CdxHg1-xTe using Group V elements. Dopant element concentrations have been controlled over the range 5×1015-8×1017 cm-13 for As. Agreement has been obtained between these levels and Hall measurements made on annealed samples, at least for concentrations above 5×1016 cm-3. At lower levels residual impurities may exert a significant influence on the electrical behaviour of layers. In order to achieve dopant activation it has been found necessary to establish “metal-rich” conditions during the CdTe growth cycle. High temperature anneals to activate the dopant are thus avoided which permits the growth of heterolayers with sharpe interfaces, both in terms of x and dopant concentration.

References (42)

  • T. Ashley et al.

    Infrared Phys.

    (1986)
  • L.O. Bubulac

    J. Crystal Growth

    (1988)
  • A.M. White

    J. Crystal Growth

    (1988)
  • T. Tung

    J. Crystal Growth

    (1988)
  • P. Capper et al.

    Mater. Letters

    (1988)
  • J. Baars et al.

    J. Crystal Growth

    (1988)
  • P. Capper

    J. Crystal Growth

    (1982)
  • P. Capper et al.

    J. Crystal Growth

    (1985)
  • M.H. Kalisher

    J. Crystal Growth

    (1984)
  • M.C. Chen et al.

    Solid State Commun.

    (1986)
  • N.R. Taskar et al.

    J. Crystal Growth

    (1988)
  • J.B. Mullin et al.

    J. Crystal Growth

    (1984)
  • J. Tunnicliffe et al.

    J. Crystal Growth

    (1984)
  • P.A.C. Whiffin et al.

    J. Crystal Growth

    (1986)
  • P. Capper et al.

    J. Crystal Growth

    (1986)
  • P. Capper et al.

    J. Crystal Growth

    (1989)
  • P.N.J. Dennis et al.

    Infrared Phys.

    (1982)
  • I.M. Baker et al.

    Proc. SPIE

    (1984)
  • I.M. Baker et al.

    Proc. SPIE

    (1985)
  • M.C. Wilson et al.

    Proc. SPIE

    (1985)
  • T. Ashley et al.

    Proc. SPIE

    (1985)
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