Invited paper
Metalorganic vapor-phase epitaxy of p-type ZnSe and p/n junction diodes

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Abstract

Growth parameters for metalorganic vapor-phase epitaxy of p-type ZnSe were discussed. The key techniques for high quality p-type doping were found to be low temperature (e.g., 350°C) growth using alkyl precursors with above-band gap photoirradiation, nitrogen doping from tertiarybutylamine, and post-growth thermal annealing (e.g., 500°C, 30 min). The net acceptor concentration obtained in this manner was 1×1017 cm-3. The p/n homojunction diodes fabricated applying the annealing technique showed well-defined current-voltage characteristics and blue electroluminescence from the p-type layer at 77 K.

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