Electrical properties of the amorphous semiconducting Se-Te-In system
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2017, Journal of Alloys and CompoundsCitation Excerpt :The addition of third element to Se–Ge chalcogenide glass has a pronounced effect on its structural and physical properties [13–18]. So, we can say that, the addition of In impurity to SeGe improve the stability as well as the electrical conductivity [19,20]. The aim of the present work is to study the effect of In addition on the switching phenomena and electrical conductivity of Se60Ge40.
Optical and electrical properties of In<inf>4</inf>Se<inf>96-x</inf>S<inf>x</inf>chalcogenide thin films
2016, Journal of Alloys and CompoundsCitation Excerpt :Which is most likely due to decrease in defect states in the band gap near the Fermi level or decrease in the density of localized states. The increase in the activation energy with increase of Sulfur concentration has been supported by the similar results obtained for the optical band gap [42,43]. The value of σ0 for a-Se and Se based alloy is expected of order 104Ω−1cm−1for conduction in the extended states [30].
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