Semiconductors of the type MeIIMeIVS3
References (8)
- et al.
Solid State Comm.
(1974) - et al.
Acta Cryst.
(1967) - et al.
C.R. Acad. Sc. Paris t.
(1972) - et al.
Acta Cryst.
(1974)
Cited by (52)
Molecular precursor driven synthesis of phase pure tin sulfide nanosheets and investigation of their photoresponsive behaviour
2022, PolyhedronCitation Excerpt :Most prevalent is α-SnS which crystallizes in both orthorhombic and cubic-zinc blend crystallographic form. Orthorhombic SnS with Pnma space group has indirect and direct band gap 1.1 and 1.3 eV which lies midway between those of elemental silicon and GaAs [11]. This makes them environmentally benign light harvesting alternatives for photovoltaic device with Shockley − Queisser limit of 32%.
Thin film Sn<inf>2</inf>S<inf>3</inf> via chemical deposition and controlled heating –Its prospects as a solar cell absorber
2020, Applied Surface ScienceCitation Excerpt :Thus, from the point of view of optical properties, thin film solar cells of Sn2S3 cells could achieve Jsc values comparable with those of established solar cells. Regarding the value of bandgap and assignment of the type of electronic transitions, disparity does exist among the values reported for Sn2S3 in 1975 for single crystal [28] and thin films. Experimental values are in the 0.95–1.16 eV interval, assigned to direct gap with forbidden transitions.
Thermal annealing of SnS thin film induced mixed tin sulfide oxides-Sn<inf>2</inf>S<inf>3</inf> for gas sensing: Optical and electrical properties
2018, Materials Science in Semiconductor ProcessingOptical characterization of mechanically alloyed PbSnS<inf>3</inf> nanocrystals
2017, Materials Science in Semiconductor ProcessingInfluence of annealing on microstructure and optical properties of hot wall deposited Pb<inf>x</inf>Sn<inf>(1 − x)</inf>S thin films
2016, Thin Solid FilmsCitation Excerpt :Besides SnS, Sn2S3, SnS2, PbS and PbSnS2, such phase as PbSnS3 with Sn2S3 orthorhombic structure can be formed in the ternary Pb-Sn-S system [1]. The PbSnS3 forms from PbS and SnS2 at 600 °C [1], that corresponds to the wall temperature applied in the HWVD method in this work. Given that, the observed phase with Sn2S3 structure may be assigned to PbSnS3.