Review paperBorder traps: Issues for MOS radiation response and long-term reliability
References (79)
- et al.
Appl. Phys. Lett.
(1992) - et al.
J. Appl. Phys.
(1993) - et al.
IEEE Trans. Nucl. Sci.
(1993) IEEE Trans. Electron Dev.
(1980)- et al.
MOS (Metal Oxide Semiconductor) Physics and Technology
- et al.
Ionizing Radiation Effects in MOS Devices & Circuits
IEEE Trans. Nucl. Sci.
(1992)- et al.
J. Appl. Phys.
(1993) - et al.
Phys. Rev. Lett.
(1966) - et al.
Bell System Tech. J.
(1967)
Appl. Phys. Lett.
(1989)
J. Appl. Phys.
(1993)
J. Appl. Phys.
(1981)
J. Appl. Phys.
(1983)
J. Appl. Phys.
(1985)
J. Appl. Phys.
(1988)
et al.J. Appl. Phys.
(1991)
J. Appl. Phys.
(1990)
IEEE Trans. Nucl. Sci.
(1993)
IEEE Trans. Nucl. Sci.
(1984)
IEEE Trans. Nucl. Sci.
(1985)
IEEE Trans. Nucl. Sci.
(1988)
et al.IEEE Trans. Nucl. Sci.
(1989)
Semicon. Sci. & Technol.
(1989)
IEEE Trans. Nucl. Sci.
(1990)
Appl. Phys. Lett.
(1992)
IEEE Trans. Nucl. Sci.
(1992)
IEEE Trans. Nucl. Sci.
(1993)
IEEE Trans. Electron Dev.
(1984)
Adv. Phys.
(1989)
Phys. Rev. Lett.
(1990)
IEEE Trans. Nucl. Sci.
(1991)
Appl. Phys. Lett.
(1984)
IEEE Trans. Nucl. Sci.
(1989)
J. Appl. Phys.
(1971)
J. Appl. Phys.
(1985)
J. Appl. Phys.
(1990)
Appl. Phys. Lett.
(1994)
Solid State Physics
Cited by (163)
Review of bias-temperature instabilities at the III-N/dielectric interface
2018, Microelectronics ReliabilityReliability Engineering of High-Mobility IGZO Transistors via Gate Insulator Heterostructures Grown by Atomic Layer Deposition
2024, Advanced Materials InterfacesOdyssey of the charge pumping technique and its applications from micrometric- to atomic-scale era
2023, Journal of Applied PhysicsTotal-Ionizing-Dose Effects in IGZO Thin-Film Transistors
2023, IEEE Transactions on Nuclear Science
Copyright © 1995 Published by Elsevier Ltd.