Donor-acceptor pair recombination in GaN
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2021, Materials Chemistry and PhysicsCitation Excerpt :Steady-state fluorescence spectra of BiVO4 exhibited a prominent band located at 500 nm and a low-energy tail band that is broadly extended to 650 nm. The latter involves charge trapping at defect states that lie within the band gap, and radiative recombination of these trapped charges produced additional emission band that is of lower energy than the band edge emission [50–52]. Both PL spectra of BiVO4 and ZnO/BiVO4 exhibited distinct luminescent peak at c. a. 640 nm.
Anomalous emission from oxygen incorporated GaN nanowires
2018, Physica E: Low-Dimensional Systems and NanostructuresCitation Excerpt :Generally, gallium-vacancy is regarded as shallow acceptor and nitrogen-vacancy is regarded as shallow donor in GaN. PL emission around ∼`3.26 eV in GaN has been well reported as a result of donor-acceptor pair (DAP) recombination [34,35]. Further, Reshchikov and Morkoc [34] also studied the unusual line emission from GaN as Yi where the most common peak near 3.21–3.23 eV is provided by Y7.
Growth study of self-assembled GaN nanocolumns on silica glass by plasma assisted molecular beam epitaxy
2017, Journal of Crystal GrowthCitation Excerpt :The NC sample demonstrates a strong band edge emission from the GaN wurtzite crystal observed at 357 nm. In addition, the emission peak at 378 nm (3.28 eV) comes from donor-acceptor pairs (DAP) recombinations, while the weaker peak at 388 nm (3.19 eV) is 1-longitudinal optical (LO) phonon replica [64–66]. The DAP recombinations can be observed despite only Si (donor) atoms were used as dopant and probably involve acceptor levels related to carbon impurities, specifically CN [67].
Yellow luminescence band in undoped GaN revealed by two-wavelength excited photoluminescence
2016, Optical MaterialsCitation Excerpt :The below-gap emission bands dominated by a donor acceptor pair (DAP) transition at 3.28 eV with several LO phonon replicas. Dingle et al. [62] firstly observed the characteristic DAP emission at 3.26 eV with several LO phonon replicas which were also reported by others [63–65]. The emission band at 3.41 eV is due to the shallow donor (oxygen impurities) to the valence band transition [65–67], hereafter it is mentioned as IOX.