Donor-acceptor pair recombination in GaN

doi:10.1016/0038-1098(71)90112-8

Solid State Communications

Volume 9, Issue 3, 1 February 1971, Pages 175-180

https://doi.org/10.1016/0038-1098(71)90112-8 Get rights and content

Abstract

Photoluminescence arising from distant donor-acceptor pair recombination in GaN has been identified and analyzed. Impurity binding energies of E_D = 42 ± 1 meV and E_A ∼ 200 meV are proposed. The recombination rate constant, W(O) = (3 ± 2) x 10⁷ sec⁻ is consistent with a direct, fundamental energy gap in GaN.

Résumé

La photoluminescence provenant de recombinaisons entre paires distnates du type donneur-accepteur a été identifiée et analysée dans le nitrure de gallium. Des énergies de liaison d'impuretés E_n = 42 ± 1 meV et E_A = 200 meV sont proposées. La valeur du taux de recombinaison W(O) = (3 ± 2) x 10^-7 sec^-1 est en accord avec l'existence d'une bande fondamentale directe dans le GaN.

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Donor-acceptor pair recombination in GaN

Abstract

Résumé

Solid State Commun.

Solid State Commun

Z. Naturf.

Z. Naturf.

J. Electrochem. Soc.

Optics and Spectrosc.

J. appl. Phys.