Elsevier

Solid-State Electronics

Volume 26, Issue 8, August 1983, Pages 739-745
Solid-State Electronics

Blocking capability of planar devices with field limiting rings

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Abstract

The results of breakdown voltage investigations of planar devices with field limiting rings are described. The two-dimensional Poisson equation is solved using the finite difference method. The question of the optimal ring spacings for devices with more than one field ring and the influence of surface charges on the blocking capability are extensively studied. The influence of the following device parameters is discussed: ring spacing, ring width, doping gradient and surface charge density. An analytical model for simplified calculations showing the principal characteristics of field ring devices is presented. Furthermore some experimental results of EBIC measurements are shown.

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