Grain boundary scattering in aluminium-doped ZnO films
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2015, Journal of Alloys and CompoundsCrystalline Size Effects on Texture Coefficient, Electrical and Optical Properties of Sputter-deposited Ga-doped ZnO Thin Films
2015, Journal of Materials Science and TechnologyDefects generated by MF magnetron sputtering and their influences on the electrical and optical properties of Al doped ZnO thin films
2015, Applied Surface ScienceCitation Excerpt :Most of the reports tend to correlate the dominating factor of mobility to the ionized impurity scattering in the heavily doped AZO films. But, for the polycrystalline AZO films with small grains, the grain boundary scattering also have an important effect on the transport properties [20]. Besides the normal grain boundary potential originated from the destruction of the periodic lattice at the grain boundaries, the AZO films are likely to be associated with chemisorbed oxygen at the grain boundaries (OGB) [21].
Effect of energetic electron beam treatment on Ga-doped ZnO thin films
2014, Current Applied PhysicsCitation Excerpt :In the current study, only a small variation of grain size of ZnO films was observed as shown in Fig. 1(c) and (d), which did not significantly affect the mobility of ZnO films. The decrease of the mobility of ZnO films by Ga doping observed in this study can be explained by a combination of ionized impurity scattering and grain boundary scattering [46,47]. However, no significant change of the carrier mobility was observed as the doping level of Ga atoms was increased, where the values were still lower than that of the undoped ZnO film.
Effects of ZnAl<inf>2</inf>O<inf>4</inf> segregation in high temperature sintered Al-doped ZnO sputtering target on optical and electrical properties of deposited thin films
2013, Surface and Coatings TechnologyCitation Excerpt :Aluminum-doped zinc oxide (AZO) thin films have received increasing attention as transparent conductive electrodes in flat panel displays and thin film solar cells in recent years due to its excellent optoelectronic properties and low raw material cost [1–8].