Elsevier

Solid State Ionics

Volume 75, January 1995, Pages 89-99
Solid State Ionics

Electronic properties of grain boundaries in SrTiO3 and BaTiO3 ceramics

https://doi.org/10.1016/0167-2738(94)00152-IGet rights and content

Abstract

The grain boundary space charge depletion layer in acceptor-doped SrTiO3 and BaTiO3 ceramics is investigated by an impedance analysis in the time domain and is described in terms of a simplified back-to-back double Schottky barrier model. A numerical simulation is employed to analyze the defect chemistry in the depletion layer and to elaborate a refined Schottky model. The local distribution of the donor-type grain boundary states causing the depletion layer and the resulting band bending are discussed.

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