Silicon pressure sensor integrates resonant strain gauge on diaphragm

doi:10.1016/0924-4247(90)85028-3

Sensors and Actuators A: Physical

Volume 21, Issues 1–3, February 1990, Pages 146-150

https://doi.org/10.1016/0924-4247(90)85028-3 Get rights and content

Abstract

A novel silicon pressure sensor has been developed which will enable high-precision pressure measurement. The sensor, which is based on a new concept, is fabricated from a single silicon crystal and has two resonant strain gauges which are held in vacuum cavities on the surface of the diaphragm to isolate them from the surrounding fluid. The two oscillating frequencies of the resonant strain gauges are differentially modulated by pressure. The sensor's measuring principle, features, its amplitude-controlled self-oscillation circuit, and the results of experiments are given.

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Silicon pressure sensor integrates resonant strain gauge on diaphragm

Abstract

Sensors and Actuators

Sensors and Actuators

Pressure sensor using Si resonant-beam strain gauge

Proc. SICE '86, Tokyo Japan

Etched silicon vibrating sensor

J. Phys. E.