Thin anodic oxide layers on aluminium and other valve metals: high field regime

doi:10.1016/0927-796X(93)90005-N

Materials Science and Engineering: R: Reports

Volume 11, Issue 6, 15 December 1993, Pages 243-294

https://doi.org/10.1016/0927-796X(93)90005-N Get rights and content

Abstract

The formation kinetics and electric properties of anodic barrier oxides on Al, Hf, Nb, Ta, Ti, and Zr depend on the migration of ions, controlled by an electric field strength of up to 10⁷ V cm⁻¹. The high field model, based on ideas of Güntherschulze, Betz, Verwey, Mott, and Cabrera, explains only parts of the experiments. Contradictory models and investigations of the last 60 years are compared with new results, which enable a more detailed understanding of many aspects of the high field model, e.g. the shape of experimental transients, the time and field dependent concentration of mobile ions, the nature of the mobile species and the interaction of anion and cation transport, and the location of the rate determining step.

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