Elsevier

Journal of Crystal Growth

Volume 181, Issue 3, 1 November 1997, Pages 193-196
Journal of Crystal Growth

MOMBE growth of InGaAs using trisdimethylaminoarsenic

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Abstract

InGaAs layers were grown by metalorganic molecular beam epitaxy (MOMBE) using trimethylindium (TMIn), triethylgallium (TEGa) and unprecracked trisdimethylaminoarsenic (TDMAAs). Substrate temperature dependence of the growth rate and In composition of InGaAs for the fixed TMIn, TEGa and TDMAAs flow rates are similar to those for the use of TMIn, TEGa and thermally cracked arsine (AsH3). Mirror-like surface In0.53Ga0.47As layers lattice matched to InP are successfully grown, for the first time, using TDMAAs as an As precursor. Growth rate is 0.3 μm/h and electron concentration is 3 × 1016cm−3. 77 K photoluminescence spectrum has a band-to-band transition peak with a full width at half-maximum as narrow as 9.8 meV.

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