Electrical properties of n-type vapor-grown gallium nitride

doi:10.1016/S0022-3697(73)80090-3

Journal of Physics and Chemistry of Solids

Volume 34, Issue 5, May 1973, Pages 885-895

https://doi.org/10.1016/S0022-3697(73)80090-3 Get rights and content

Abstract

Hall measurements are reported for undoped and Zn-doped vapor-grown single crystal GaN on (0001) Al₂O₃ layers with 298 K carrier concentrations (n-type) between 1·4×10¹⁷cm⁻³ and 9×10¹⁹ cm⁻³. Then n∼10¹⁷ cm⁻³ crystals (undoped) have mobilities up to μ∼440 cm²/V sec at 298 K. Their conduction behavior can be described by a two-donor model between 150 and 1225 K and by impurity band transport below 150 K. Crystals with n≥8×10¹⁸ cm⁻³ show metallic conduction with no appreciable variation in n or μ between 10 and 298 K.

Results of mass spectrographic analyses indicate that the total level of impurities detected is too low to account for the observed electron concentration at the n∼10¹⁹ cm⁻³ level, and suggest the presence of a high concentration of native donors in these crystals. No significant reduction in carrier concentration was achieved with Zn doping up to concentrations of ∼10²⁰ cm⁻³ under the growth conditions of the present work, and no evidence was found to indicate that high conductivity p-type behavior may be achieved in GaN. The influence of factors such as growth rate, crystalline perfection and vapor phase composition during growth on the properties of the layers is described.

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Electrical properties of n-type vapor-grown gallium nitride

Abstract

J. Cryst. Growth

J. Cryst. Growth

J. Luminesc.

Solid State Commun.

Surface Sci.

Phys. Rev.

Appl. Phys. Lett.

RCA Rev.

Appl. Phys. Lett.

J. electrochem. Soc.

J. electrochem. Soc.

J. Vacuum Sci. Technol.

Z. Naturforsch.

J. Mater. Sci.

J. electrochem. Soc.