Simulation of time depending void formation in copper, aluminum and tungsten plugged via structures
References (0)
Cited by (25)
Electromigration in submicron interconnect features of integrated circuits
2011, Materials Science and Engineering R: ReportsCitation Excerpt :This work has been continued in the publications of Kirchheim and Kaeber [87] who also introduced a thermodynamical expression for the atomic flux driven by the gradient of the hydrostatic stress. The study of realistic three-dimensional structures was enabled by a numerical implementation of the model which was performed by Weide-Zaage et al. [88]. The crucial relationship between EM and mechanical stress has begun to reveal in the work of Blech [29,30], which together with Black [27] designates a second development line of EM models.
Physically based models of electromigration: From Black's equation to modern TCAD models
2010, Microelectronics ReliabilityCircuit level interconnect reliability study using 3D circuit model
2010, Microelectronics ReliabilityCitation Excerpt :The step by step procedure for converting a 2D circuit layout into 3D model is reported in our recent work [23], and the complete 3D model is shown in Fig. 3. The properties of the various materials used in the model are shown in Table 2 [24–26], and the variation of thermal conductivity with temperature for some of the materials is shown in Table 3 [27]. The thermal conductivity of the encapsulation is assumed to be temperature independent here as the test temperature of 90 °C is below its glass transition temperature which is usually 260 °C [28].
Simulation of migration effects in nanoscaled copper metallizations
2008, Microelectronics ReliabilityDetermination of migration effects in Cu-via structures with respect to process-induced stress
2008, Microelectronics ReliabilityDynamic void formation in a DD-copper-structure with different metallization geometry
2007, Microelectronics Reliability