Elsevier

Microelectronics Reliability

Volume 43, Issues 9–11, September–November 2003, Pages 1821-1826
Microelectronics Reliability

Simulation of time depending void formation in copper, aluminum and tungsten plugged via structures

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Cited by (25)

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    This work has been continued in the publications of Kirchheim and Kaeber [87] who also introduced a thermodynamical expression for the atomic flux driven by the gradient of the hydrostatic stress. The study of realistic three-dimensional structures was enabled by a numerical implementation of the model which was performed by Weide-Zaage et al. [88]. The crucial relationship between EM and mechanical stress has begun to reveal in the work of Blech [29,30], which together with Black [27] designates a second development line of EM models.

  • Circuit level interconnect reliability study using 3D circuit model

    2010, Microelectronics Reliability
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    The step by step procedure for converting a 2D circuit layout into 3D model is reported in our recent work [23], and the complete 3D model is shown in Fig. 3. The properties of the various materials used in the model are shown in Table 2 [24–26], and the variation of thermal conductivity with temperature for some of the materials is shown in Table 3 [27]. The thermal conductivity of the encapsulation is assumed to be temperature independent here as the test temperature of 90 °C is below its glass transition temperature which is usually 260 °C [28].

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