On the permeation of hydrogen and helium in single crystal silicon and germanium at elevated temperatures
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Cited by (479)
Generation and loss of hydrogen-boron pairs in fired silicon wafers
2023, Materials Science in Semiconductor ProcessingImprovement of passivation performance of silicon nanocrystal/silicon oxide compound layer by two-step hydrogen plasma treatment
2023, Solar Energy Materials and Solar CellsCorrelation study between LeTID defect density, hydrogen and firing profile in Ga-doped crystalline silicon
2023, Solar Energy Materials and Solar CellsCross section of <sup>15</sup>N-<sup>2</sup>D nuclear reactions from 3.3 to 7.0 MeV for simultaneous hydrogen and deuterium quantitation in surface layers with <sup>15</sup>N ion beams
2020, Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and AtomsCitation Excerpt :Decreased 2D-derived γ-yield, for instance, may then arise either from 2D loss from the target (such as from desorption or 1H/2D isotope exchange) as well as from a redistribution of 2D into deeper bulk regions, where the probing 15N energy is reduced by stopping and hence the effective 15N-2D cross section smaller. The 15N-2D NRA method should nonetheless be useful whenever the depth location of the 2D in the sample is rigidly confined to a narrow depth region by the target material and structure in the depth dimension, such as in the present case of the thin a-C:D films, where the 2D solubility in the Si substrates is far below the NRA detection limit [27]. For similar such systems, we therefore expect the method to be highly promising to investigate 1H/2D exchange or diffusion processes in surface thin films or in buried thin layers of 1H/2D-containing functional materials by means of isotopic tracing.
Hydrogen-induced degradation: Explaining the mechanism behind light- and elevated temperature-induced degradation in n- and p-type silicon
2020, Solar Energy Materials and Solar CellsCitation Excerpt :The reported diffusivity DH(+/0/-) of H+ in p-type silicon at 150 °C is DH+ = 3 × 10−13 cm2s−1, whereas H− in n-type silicon is reported to have a diffusivity DH- = 3 × 10−10 cm2s−1, that is, three orders of magnitude quicker [60]. In both n- and p-type silicon, the neutral charge state of hydrogen, H0, is expected to have the greatest diffusivity (DH0 = 1.8 × 10−8 cm2s−1), due to its limited interaction with dopants and impurities [71]. If we consider our previous hypothesis in Ref. [39] that the recovery of LeTID may be related to the out-diffusion of hydrogen towards the wafer surfaces, it may be expected that in materials of opposing polarity or differing excess carrier injection, the variations in hydrogen charge state occupation should significantly alter the LeTID recovery reaction kinetics.