Elsevier

Thin Solid Films

Volume 286, Issues 1–2, 30 September 1996, Pages 203-212
Thin Solid Films

Measurements of the debond energy for thin metallization lines on dielectrics

https://doi.org/10.1016/S0040-6090(96)08551-3Get rights and content

Abstract

A new method for measuring the interface fracture energy Γi for thin metal films on dielectrics has been used to study the interface between vapor deposited Cu films and various dielectric substrates (SiO2, SiNx and polyimide). For fixed Cu film thickness, the ordering of Γi from lowest to highest has been established as: CuSiNxCuSiO2Cupolyimide. For a given interface, the effects of Γi of Cu layer thickness have been found to be small for thin films in the range 50–500 nm. Γi increases slightly with layer thickness. There are also small effects on Γi of mode mixity angle, Ψ: Γi increases as Ψ increases from ∼ 0 to ∼ 50°.

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