Process related defects
Point defect generation in SiO2 by interaction with SiO at elevated temperatures

https://doi.org/10.1016/S0167-9317(97)00048-8Get rights and content

Abstract

The interaction of fused silica (SiO2) with gaseous SiO during annealing at ∼1140 °C has been studied by electron spin resonance (ESR). In contrast with annealing in vacuum, this results in the generation of an isotropic defect in SiO2 of g=2.0028 and peak-to-peak width 3.6 – 6 G. These spectroscopic properties are similar to those of the signal found generated in the oxide layer of standard thermal SiSiO2 structures upon postoxidation annealing in vacuum a ≳ 960 °C, assigned to S centers, tentatively ascribed previously to E'-like defects of the type O2SiSi· or OSi2Si·. An attendant observation is enhanced sensitivity of the SiO2 network to photogeneration (VUV) of E'γ defects (O-vacancy center O3Si·). The results suggest that interaction of interface generated SiO with the SiO2 network may explain the degradation of the thermal SiSiO2 structure during postoxidation annealing in vacuum.

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Cited by (15)

  • Structure and light emission of Si-rich Al<inf>2</inf>O<inf>3</inf> and Si-rich-SiO<inf>2</inf> nanocomposites

    2014, Microelectronic Engineering
    Citation Excerpt :

    The highest amplitude of this signal is observed for samples with x = 0.22 (Fig. 2c). The signal with g4 = 2.0028 was also observed for oxidized silicon annealed additionally in oxygen-free ambient at 960–1130 °C and can be ascribed to S-centers, previously assigned to E’-like defects of type O2SiSi· and/or OSi2Si· [21], i.e. this is an excess-Si defect in SiO2 matrix (that can be considered as a signal of non-stoichiometric silicon oxide). It is obvious that such defects in Six(SiO2)1−x films can be built by excess Si atoms which cannot form Si-ncs due to their low amount.

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