Wafer-to-wafer fusion bonding of oxidized silicon to silicon at low temperatures
References (9)
- et al.
IC-compatible wafer-to-wafer bonding
Sensors and Actuators A
(1997) - et al.
Water at interfaces: molecular structure and dynamics
J. Colloid Interface Sci.
(1977) - et al.
IC-compatible silicon fusion bonding, Tech. Digest, Eurosensors X
- et al.
Tensile strength characterization of low-tem-perature fusion-bonded silicon wafers
J. Micromech. Microeng
(1991)
There are more references available in the full text version of this article.
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