Wafer-to-wafer fusion bonding of oxidized silicon to silicon at low temperatures

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Abstract

In this paper a silicon wafer-to-wafer bonding process is presented where silicon dioxide is used as an intermediate layer. Because the process temperature is very low (120 °C) and because the chemical treatment of the surface before bonding does not damage aluminium patterns, wafers containing electronic circuity can be bonded. The oxide layer gives an electrical insulation between the two wafers. High bond strengths (over 20 MPa) are obtained.

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    After SOI technology was introduced in the 1970s as a new substrate technology for military or space applications, different approaches were proposed for SOI fabrication such as silicon-on-sapphire (SOS), separation by implantation of oxygen (SIMOX), bonded SOI, and epitaxial layer transfer [1–5].

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