Elsevier

Applied Surface Science

Volume 394, 1 February 2017, Pages 258-266
Applied Surface Science

Full Length Article
Gas dependent sensing mechanism in ZnO nanobelt sensor

https://doi.org/10.1016/j.apsusc.2016.10.085Get rights and content

Highlights

  • ZnO nanobelts exhibit an appreciable response towards H2S and NO.

  • At room temperature, sensor recovers completely after exposure to NO (1 to 60 ppm).

  • At room temperature, incomplete recovery observed on exposure to higher concentrations of H2S (> 5 ppm).

  • Complete recovery on exposure to concentrations higher than 5 ppm H2S is achieved by heating the sensor films at 250 °C.

  • Incomplete recovery after exposure to higher concentrations of H2S is due to formation of ZnS.

Abstract

Gas sensing properties of ZnO nanobelts synthesized using carbothermal reduction method has been investigated. At room temperature (28 °C), the sensor films exhibit an appreciable response towards H2S and NO and response of these two gases were studied as a function of concentration. For NO the sensor films exhibit a complete reversible curve for the concentration range between 1 and 60 ppm. However, for H2S a complete recovery was obtained for concentration <5 ppm and for higher concentration a partial recovery of the baseline resistance was observed. The reason for the incomplete recovery was investigated using X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) studies of the sample before and after the H2S exposure. After exposure, appearance of an additional peak at 26.6° corresponding to the formation of ZnS was observed in XRD. Formation of additional phase was further corroborated using the results of XPS. H2S exposure causes decrease in the intensity of O 1s peak and appearance of sulphide peaks at binding energies of 162.8 and 161.8 eV corresponding to S-2p peaks – 2p3/2 and 2p1/2, confirms the formation of ZnS upon exposure.

Introduction

Semiconducting metal oxides are widely used as commercial sensors as they exhibit a wide range of electronic, chemical, and physical properties that are often highly sensitive to chemical environment [1]. These electronic, chemical, and physical properties of oxides are created and can be tuned due to their two unique structural features: mixed cation valencies and an adjustable oxygen deficiency. Among the various oxides, zinc oxide (ZnO) is one of the promising material for gas sensing due to its non-toxicity, high chemical and physical stability and low cost. The structure of ZnO mainly comprises of number of planes containing tetrahedrally coordinated O2− and Zn2+ ions, stacked alternately along the c-axis. The oppositely charged ions produce positively charged (0001)-Zn and negatively charged (000ī)-O polar surfaces, resulting in a normal dipole moment and spontaneous polarization along the c-axis, as well as a divergence in surface energy [2]. It has three fastest growth directions namely 〈0001〉, 〈0110〉, and 〈2110〉. Importantly, ZnO exhibit a wealth of interesting nanostructures that have demonstrated the potential to realize highly sensitive gas sensors. The different nanoforms of ZnO include nanoparticles, nanowires, nanobelts, nanosheets, nanoflowers, hexagonal discs, cones and much more. The surface area to volume ratio exhibited by these nanoforms has been utilized effectively to realize sensors for various gases. These include CH3CH2OH, CH3COCH3, O3, NO2, CO, H2S, H2, HCHO, NH3, LPG etc [3], [4], [5], [6], [7], [8], [9], [10], [11]. Sensor response is reported to increase with decrease in grain size [12], [13], [14]. Traditionally, ZnO gas sensors are implemented as chemiresistive sensors, which work on the principle of change in electrical resistance due to interaction between the semiconductor and the test gas [15], [16].

Of the different nanoforms, nanobelts which have a rectangular cross section, in correspondence to a beltlike (or ribbonlike) morphology with width-to-thickness ratios of 5 to 10 are particularly promising for gas sensing applications due to their smaller thickness. Nanobelts are generally more defect rich in comparison to that of nanowire counterparts [17]. However there are only a few studies on investigation of gas sensing properties of ZnO nanobelts [18], [19], [20], [21], [22]. In the present work, H2S and NO gas sensing properties of ZnO nanobelts sensor has been investigated.

Nitric oxide (NO) is readily converted in the air to nitrogen dioxide (NO2) [23] with a formation rate constant of 1.2 × 1011 ppm−2 s−1 [24]. The time to reach 5 ppm NO2 from 20 ppm nitric oxide in 100% oxygen is 12 min, while in air it is more than 1 h.

Nitric oxide (NO) reacts with moisture and oxygen present in skin, eye and mucous membrane, and gets converted into nitric and nitrous acids, thus acting as an irritant. Inhalation of (NO) causes coughing and shortness of breath, along with a burning in the throat and chest [25]. Further NO makes the blood vessels expand, which would make people fainted [26].

At high concentration levels, nitrogen dioxide (NO2) is potentially toxic to plants, it reduces growth and yield of leaves. In combination with either ozone (O3) or sulphur dioxide (SO2), nitrogen dioxide may cause injury at even lower concentration levels. As one of the components of smog, nitrogen dioxide (NO2) is known to irritate the lungs and increase susceptibility to respiratory infections.

H2S is one of the highly toxic and flammable gases being used in various industrial applications like oil and gas industries, pulp and paper industries, waste water treatment plants and nuclear reactors (heavy water plants). It has a characteristic rotten egg odor and can be detected at concentrations >0.13 ppm by human nose. However, repeated exposures or exposure to higher concentrations causes a drastic decline in the ability to smell. Importantly, it can interact with the enzymes in the blood stream inhibiting the cell respiration. This implies exposure to high concentrations can stop the functioning of lung and could be fatal. The long term (8 h) and short term (10 min) exposure limits of H2S are 10 and 15 ppm, respectively [27]. Accordingly, it is crucial to detect H2S at such concentration levels.

In the present work, gas sensing properties of ZnO nanobelts synthesized using carbothermal reduction method have been investigated in detail. At room temperature (∼28 °C) nanobelts were found to be sensitive towards H2S and NO. In case of NO, a complete recovery was observed for concentration <60 ppm whereas for H2S, complete recovery was observed for concentration <5 ppm. For higher concentrations, a complete recovery is achieved upon heating the sensor film at higher temperature of 250 °C. The slow or partial recovery at H2S concentrations >5 ppm has been attributed to formation of ZnS. The results of x-ray photo electron and x-ray diffraction further confirmed the formation of ZnS.

Section snippets

ZnO nanobelts synthesis

ZnO nanobelts were grown using a carbothermal reduction method. For this a homogeneous mixture of ZnO and graphite in 3:1 ratio (by weight) was used as the source material. The reaction mixture was kept at the middle of the high temperature furnace and heated at 1050 °C with a controlled rate of 6 °C/min under Ar environment (500 sccm). Oxygen at a flow rate of 50 sccm was introduced in the furnace when the temperature reached 700 °C. The furnace was kept at the deposition temperature of 1050 °C for 5

Microstructural characterization of ZnO nanobelts

As shown in Fig. 2, ZnO nanobelts exhibit the characteristic lengths of several micrometers and diameter in the range 100–200 nm. XRD pattern of ZnO as shown in Fig. 2(b) can be indexed to the hexagonal phase of ZnO as per JCPDS Card number 80.0075, with no trace of other phases. Lattice parameters as calculated from the diffraction pattern were found to be a = b = 0.324 nm and c = 0.520 nm in accordance with the literature value [18]. EDAX measurements as shown in Fig. 2 (c) further confirmed the

Conclusion

Chemi-resistive gas sensing properties of ZnO nanobelts grown by carbothermal method were investigated. At room temperature (∼28 °C), the sensor film were found to be sensitive towards H2S and NO. For NO, the sensor film exhibited a complete recovery for all the concentrations (1–60 ppm). While for H2S, the response curves in particular the recovery time were strongly dependent on the gas concentration. At lower concentration (<5 ppm) H2S predominantly interacts with adsorbed oxygen species and

Acknowledgements

This work is supported by Department of Atomic Energy (DAE) under Project No. XII-N-R&D 32.5: Development of organic solar cells, thermoelectric devices and chemical sensor arrays for selective detection of toxic gases (Financial Sanction No.: 3/17/2013/BARC/R&D-I/7650 dated June 14, 2013). Authors would like to thank Dr. S. Bhattacharya for his help in SEM measurements and Rajneesh Mohan, Aditi Joshi and Meetu Bharti for their help in gas sensing experiments.

Dr. Manmeet Kaur received her PhD from Devi Ahilya Vishwavidyalaya, Indore in 1998. She joined Bhabha Atomic Research Centre, Mumbai in 2002 and is currently working as Scientific Officer-F. Her interests include development of thin films and nano-structures of various metal oxides for toxic gas sensing applications.

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    Dr. Manmeet Kaur received her PhD from Devi Ahilya Vishwavidyalaya, Indore in 1998. She joined Bhabha Atomic Research Centre, Mumbai in 2002 and is currently working as Scientific Officer-F. Her interests include development of thin films and nano-structures of various metal oxides for toxic gas sensing applications.

    Mrs. S. Kailasa Ganapathi joined Bhabha Atomic Research Centre, as a Scientific Assistant in 2006 through CAT-I training. She has worked on the development of Hydrogen sulphide gas sensors based on tin oxide and copper oxide thin films. She has completed her M.Sc (by research in Physics) from University of Mumbai. Her M.Sc research work focused mainly on chemiresistive gas sensors using CuO thin films and nanowires. Presently she is working on various metal oxide semiconductors for diverse toxic gas sensing applications.

    Dr. Niranjan Ramgir completed his PhD (Physics) in 2006 from National Chemical Laboratory, Pune, India. After completing his Humboldt fellowship at Nanotechnology Group, University of Freiburg, Germany, he joined Bhabha Atomic Research Centre as Scientific Officer. His current research work is focused on applications of organic and inorganic semiconducting materials sensing and e-nose applications.

    Dr. Niyanta Datta has completed her B.Sc. (Hons) in Physics from Delhi University and M.Sc in Physics from IIT Roorkee in 2008. She joined Bhabha Atomic Research Center in 2008 through 52nd batch of training school and completed her doctoral degree from Homi Bhabha National Institute, Mumbai. Currently she is working as a Scientific Officer – D and her interests include study of charge transport and gas sensing properties of various nanostructures.

    Mr. Sushil Kumar has joined Heavy Water Plant, Manuguru through 51st batch of training school. Currently he is working as a scientific officer – D and his interests include development of H2S Sensors for Industrial Applications.

    Dr. A.K. Debnath joined in Technical Physics Division of BARC in 1993 and is presently working as Scientific Officer (G). In 1995 he obtained Ph.D. degree from University of Mumbai. He did his post-doctoral research work on CMR materials during 2001–2002 in Centre for Condensed Matter Sciences, National Taiwan University, Taiwan. He extensively worked on oxide materials based gas sensors, particularly for H2S detection. He also worked in the field of organic semiconductor thin films grown by MBE to study their charge transport and gas (Cl2, H2S) sensing properties. His current research interest is to develop thin film based thermoelectric devices. He is a recipient of DAE Science and Technical excellence award-2012.

    Dr. D. K. Aswal joined Bhabha Atomic Research Center in 1986 through 30th Batch of Training School after completing M.Sc. (Physics) from Garhwal University. His area of scientific interest is condensed matter physics, specializing in device-oriented research leading to hybrid molecule-on-Si nanoelectronics, thermoelectric devices, and gas sensors. He is a recipient of several international fellowships including, JSPS fellowship, Japan (1997–99), IFCPAR fellowship, France (2004–05), BMBF fellowship, Germany (2006) and CEA fellowship, France (2008). He is recipient of several awards, including “MRSI Medal 2010”, “Homi Bhabha Science and Technology Award-2007”, “DAE-SRC Outstanding Research Investigator Award-2008”, and “Paraj: Excellence in Science Award, 2000”.

    Dr. S. K. Gupta joined Bhabha Atomic Research Center in 1975. Over the years, he has worked on space quality silicon solar cells, high temperature superconductor thin films and single crystals, gas sensors and thermoelectric materials. He has carried out extensive studies on vortex dynamics in superconductors. He is a member of the National Academy of Sciences, India.

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