Elsevier

Dyes and Pigments

Volume 132, September 2016, Pages 159-166
Dyes and Pigments

Synthesis, electronic structure and photoluminescence properties of Ba2BiV3O11: Eu3+ red phosphor

https://doi.org/10.1016/j.dyepig.2016.04.052Get rights and content

Highlights

  • Ba2BiV3O11: Eu3+ phosphors were prepared by the sol–gel method.

  • The electronic structure of Ba2BiV3O11 was estimated by density functional theory.

  • Ba2BiV3O11: Eu3+ can be excited at 394 and 465 nm and emit red light.

Abstract

Eu3+-activated Ba2BiV3O11 red-emitting phosphors have been successfully synthesized by the sol–gel method. The electronic structure of Ba2BiV3O11 host was estimated by density functional theory (DFT) calculation. The structure and phase purity of the samples were characterized by powder X-ray diffraction (XRD), and their photoluminescence (PL) spectra, decay curves of 5D07F2 transitions, absorption spectra, and the Commission International de I’Eclairage (CIE) color coordinates were also investigated. The thermal stabilities of the phosphors were studied using the dependence of the luminescence intensities on temperature, and thermal activation energy was also determined. The results demonstrated that Ba2BiV3O11: Eu3+ was a potential red-emitting phosphor for n-UV-based white light-emitting diodes (w-LEDs).

Graphical abstract

Band structure (a) and the crystal structure (b) of Ba2BiV3O11 as well as PL spectrum of Ba2BiV3O11: 0.6Eu3+ with its CIE coordinates (c).

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Introduction

White light emitting diodes (w-LEDs) have gradually replaced traditional light sources for applications in display, decoration and illumination because of their energy saving, durability, high efficiency and environmental friendly merits over conventional light sources [1], [2], [3]. Generally, most w-LED commercial products are produced by combining an InGaN-based blue LED chip with a yellow phosphor YAG: Ce3+, which suffers from low color rendering index (CRI, < 75) and high color temperature (>4500 K) due to the deficiency of red light component [4]. At present, there are two common ways to solve the above problems: one is combining a blue LED chip (420–470 nm) with red and green phosphors; the other is fabricated by pumping tricolor (red, green, and blue) phosphors with a near-ultraviolet (n-UV) LED chip (350–410 nm) [5], [6], [7]. Both of the aforementioned methods require high efficient red emitting phosphors.

The Eu3+ ion is a classical activator for efficient red phosphors and has been widely investigated due to its characteristic red emissions from 5D0 → 7FJ (J = 0−4) transitions. Among these transitions, the dominant 610–630 nm emission from 5D0 → 7F2 electric dipole transition is conducive to improve the color purity of the phosphor, in which Eu3+ occupies the lattice sites without centro-symmetry [8], [9]. In addition, the excitation spectra of Eu3+ ions in oxide hosts are usually composed of two parts: charge transfer band and excitation peaks around 394 and 465 nm, which match well with the emission of n-UV or blue LED chips. Up to now, the main commercial red-light emitting phosphors are still restricted to Eu2+ doped nitrides and Y2O2S: Eu3+, but the synthesis conditions required for the former is extreme and the latter is chemically unstable, which leads to high cost and shortening the life time of w-LEDs [10], [11]. Hence, there is requirement to search for novel environment-friendly red phosphors with remarkable chemical stability and high luminance.

As important phosphor hosts, vanadates were given more attention for their potential applications in LEDs because they not only have physical and chemical stability but also present strong absorption in blue or UV region [12], [13]. However, most of these phosphors were prepared by the conventional solid-state reaction, the conditions of which are incongruous with the concept of saving energy by using LEDs since their preparation requires high temperature, sufficient grinding and long energy consuming heating process [14], [15], [16]. The sol–gel method is a perfect way for oxide compounds to reduce the synthesis temperature and shorten the annealing time, which has been extensively used in the preparation process of phosphors. The Bi3+ ion usually is an efficient dopant by strengthening and broadening UV excitation bands when the doping concentration is opportune, it is interesting to investigate whether Bi3+ has a large effect or not if the host contains Bi3+ ions. Ba2BiV3O11 with the monoclinic crystal structure has rarely been reported as a phosphor host. Herein, Eu3+-doped Ba2BiV3O11 red emitting phosphors were synthesized via a sol–gel method, the structure and photoluminescence properties of the phosphors have been investigated. The series of phosphors can be efficiently excited by 394 and 465 nm light, and exhibited pure red emission peaking at 619 nm. Furthermore, the role of the Bi3+ in the host was also analyzed by the electronic structure of the Ba2BiV3O11 host.

Section snippets

Preparation of phosphors

Series of Ba2Bi1−xEuxV3O11 (x = 0, 0.05, 0.2, 0.4, 0.6, 0.8 and 1.0) samples were prepared by a sol–gel method using analytical reagents (AR) BaCO3, Bi(NO3)3・5H2O, NH4VO3, citric acid and high purity Eu2O3 (99.99%, Shanghai Yuelong Nonferrous Metals Ltd.) as raw materials. In a typical experiment, the stoichiometric amounts Eu2O3 and BaCO3 were first dissolved in diluted nitric acid (AR) with vigorous stirring and heating, and the redundant nitric acid was volatilized at high temperature. Then

X-ray diffraction and structure characters

In the present system, Eu3+ ions are expected to enter the sites of Bi3+ due to their identical valence and close radius values, thus the nominal formula of the phosphors are Ba2Bi1−xEuxV3O11. The X-ray diffraction (XRD) patterns of Ba2BiV3O11: 0.05Eu3+ phosphors sintered at various temperatures ranging from 700 to 1000 °C were measured and shown in Fig. 1a. All of the diffraction peaks match well with the standard XRD patterns of the Ba2BiV3O11 (JCPDS No. 81-1778), which indicate that the pure

Conclusions

In summary, a series of Ba2BiV3O11: Eu3+ phosphors were prepared by the sol–gel method and the optimal synthesis parameters are 1000 °C for 5 h. The calculation of the electronic structure display that pure Ba2BiV3O11 has an indirect band gap with 2.81 eV and the host absorption is mainly ascribed to the charge transition from the O-2p to V-3d states. The photo-luminescent properties of Ba2BiV3O11: Eu3+ reveals that these samples could be efficiently excited by 394 nm and 465 nm and emit pure

Acknowledgments

This work was supported by the high-level talent project of Northwest University, National Natural Science Foundation of China (11274251), Ph.D. Programs Foundation of Ministry of Education of China (20136101110017), Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China (excellent), Natural Science Foundation of Shaanxi Province (2014JM1004) and Foundation of Key Laboratory of Photoelectric Technology in Shaanxi Province (12JS094).

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